IXYS

IXGH24N60B - 600V 48A HiPerFAST IGBT TO-247AD | IXYS

Артикул: IXGH24N60B ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
600 V Vdss 48 A (TC = 25 C) Id TO-247AD through-hole (JEDEC) Package
От $6.6 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-10-13
Оптовые цены
Кол-во Цена за ед. Итого
1 $12.2 $12,20
10 $10.9 $109,00
100 $9.15 $915,00
500 $7.75 $3.875,00
1.000 $6.6 $6.600,00
ℹ️ Все цены указаны в USD

IXGH24N60B Обзор

The IXYS IXGH24N60B is a 600 V, 48 A HiPerFAST discrete IGBT built on IXYS' 3rd-generation HDMOS power process and housed in an industry-standard JEDEC TO-247AD through-hole package. It combines the high input impedance and simple MOS gate drive of an IGBT with the low conduction loss of a bipolar output stage, delivering a collector-emitter saturation voltage of approximately 1.35 V at the rated current and switching speeds typical of the HiPerFAST (Lightspeed) generation.

An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor in the voltage-controlled switch family. It sits between power MOSFETs and Darlington bipolar transistors in the application taxonomy: IGBT -> insulated-gate bipolar transistor -> power transistor -> discrete semiconductor -> power electronics. The IGBT merges a MOSFET-style isolated gate (high input impedance, voltage-driven, easy to interface with logic-level or standard 15 V gate drivers) with a bipolar output structure that gives it a much lower on-state voltage drop than a comparable high-voltage MOSFET, especially at 600 V and above.

Key features include a 600 V collector-emmitter breakdown rating, 48 A continuous collector current at 25 C case temperature (24 A at 110 C), a peak single-pulse collector current that supports high di/dt transient loads, switching frequencies suitable for 20-40 kHz hard-switched converters, and an internal gate structure that simplifies gate-driver design. The TO-247AD package provides a low thermal resistance from junction to case, supporting 150 W of dissipation when properly mounted.

Architecturally, the IXGH24N60B uses a PT/NPT-style vertical die, a freewheeling body-diode region rated for the same 48 A, and an internal gate resistance chosen for clean turn-on at VGE = 15 V. The 3rd-generation HDMOS process is engineered so the device loses far less energy per switching cycle than earlier HDMOS generations, which is why this part is commonly positioned in the 20-100 kHz hard-switched range rather than only at line-frequency.

Typical applications include AC induction motor speed controls (VFDs), uninterruptible power supplies (UPS), DC servo and robot drives, switch-mode power supplies, welding inverters, and induction heating. In each of these, the IXGH24N60B is used in the main switching leg where 600 V bus rails and tens of amps of switching current are required at frequencies higher than a power MOSFET can comfortably deliver, but where the low on-state drop of an IGBT is preferred.

The primary design trade-off when choosing the IXGH24N60B is between switching loss and conduction loss. Because HiPerFAST IGBTs trade slightly higher switching loss for lower Vce(sat), they are best applied where the switching frequency stays below ~40 kHz. Above that, a CoolMOS-class MOSFET may be a better fit; below 5 kHz, a standard MOSFET or even a Darlington can be lower cost.

This page synthesizes distributor pricing, current stock across DigiKey and Mouser, package-level drop-in alternatives, and practical design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers an at-a-glance answer to where the IXGH24N60B fits and what can replace it.

Аналоги без доработки для IXGH24N60B — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

IXGH24N60C

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, slightly lower conduction loss and tighter Vce(sat); HiPerFAST family successor

📋 Справочный аналог (нет в каталоге)

IXGH24N60BU1

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, /U1 is an enhanced / tighter-spec variant in the same HiPerFAST family

📋 Справочный аналог (нет в каталоге)

IXGH32N60A

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, higher 32 A continuous capability (~17% higher current) vs 24 A at 110 C; 600 V rating preserved

📋 Справочный аналог (нет в каталоге)

IXGH40N60B2D2

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, higher current 40 A (~25% higher continuous IC110), 600 V rating preserved, second-generation HDMOS

📋 Справочный аналог (нет в каталоге)

IXGH48N60A3

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, higher current 48 A continuous (same headline rating), 600 V rating preserved, Gen-A3 process

📋 Справочный аналог (нет в каталоге)

IXGH20N60B

✅ Прямая замена
📦 TO-247AD
same TO-247AD footprint, 20 A continuous (lower current rating); same 600 V VCES; downgraded cost option

📋 Справочный аналог (нет в каталоге)

IXGH24N60B Максимальные параметры и электрические характеристики

Manufacturer IXYS (now part of Littelfuse)
Product Type Single discrete IGBT (Insulated-Gate Bipolar Transistor)
Technology 3rd generation HDMOS HiPerFAST
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC25) 48 A (TC = 25 C)
Continuous Collector Current (IC110) 24 A (TC = 110 C)
Pulsed Collector Current (ICM) Data per datasheet SOA curve; transient rating per RBSOA
Gate-Emitter Voltage (VGES) +/-20 V (max)
Power Dissipation (PD) 150 W (TC = 25 C)
Operating Junction Temperature (TJ) -55 C to +150 C
Storage Temperature (Tstg) -55 C to +150 C
Корпус TO-247AD through-hole (JEDEC)
Тип монтажа Through Hole
Switching Family HiPerFAST / Lightspeed Series
Статус RoHS Compliant (Details per datasheet)

Конфигурация выводов IXGH24N60B

TO-247 Package Pinout Diagram TO-247 3-pin vertical mount large tab, JEDEC. 1 2 3 TO-247
Контакт 1 Gate (G) — Gate control input; drive at +15 V to turn on, 0 V to turn off; do not exceed +/-20 V VGE
Контакт 2 Collector (C) — Main current terminal and high-voltage bus connection (drain-side)
Контакт 3 Emitter (E) — Main current return terminal (source-side); connect to gate-driver return

Forward Bias Область безопасной работы (FBSOA) and Reverse Bias SOA (RBSOA) - HiPerFAST

Импульсный режим

Типичное применение

IXGH24N60B подходит для 7 применениеs: AC Induction Motor VFD, UPS / Inverter Power Stage, DC Servo / Robot Drive, Induction Heater / Welding Inverter, Switch-Mode Power Supply (SMPS), Solar Inverter DC-DC Stage, Braking / Crowbar Protection.

🏭

AC Induction Motor VFD

The IXGH24N60B is well matched to 380-480 V AC variable-frequency drives for three-phase induction motors in the 5-15 kW range. The 600 V VCES leaves derating margin for a 480 V rectified bus plus switching transients, and the 48 A continuous IC25 handles the inverter-stage current with proper heatsinking. Its HiPerFAST process keeps turn-off losses down so 20-40 kHz hard switching is feasible, shrinking the LC filter and overall VFD size. In a typical VFD inverter leg the IXGH24N60B sits between the DC bus and the motor phase, switched by a gate driver running at +15 V on the gate and a small RC snubber for dv/dt control.

🖥️

UPS / Inverter Power Stage

Online UPS units and grid-tie inverters in the 3-10 kW class use the IXGH24N60B in the H-bridge or three-phase IGBT bridge. With 48 A continuous and 600 V VCES it can deliver 5-10 kVA from a 192-384 V battery stack while leaving voltage margin for cold-start inrush. The HiPerFAST switching family supports 20-40 kHz hard switching which lets the UPS use a smaller high-frequency transformer and lighter magnetics. The TO-247AD package is bolted directly to an aluminum heatsink, simplifying thermal design for tower and rack-mount UPS systems.

🏭

DC Servo / Robot Drive

Industrial servo amplifiers and robotic-arm drives use the IXGH24N60B as the main switching element in a four-quadrant H-bridge that drives a brushless DC servo motor. The 48 A IC25 rating covers the 15-30 A continuous servo current with room for peak torque transients, and the 600 V VCES accepts 400 V DC bus rails standard in industrial servo. HiPerFAST switching speeds enable tight current-loop bandwidth, critical for precision motion control. The TO-247AD through-hole package bolts directly to the servo amplifier chassis for clean thermal management.

⚡

Induction Heater / Welding Inverter

Resonant inverter topologies for induction heating and welding machines rely on the IXGH24N60B to handle high di/dt switching at 30-100 kHz. Although HiPerFAST is optimized for hard-switched use, its rugged RBSOA makes it tolerant of clamped-inductive-load switching common in resonant tanks. The 48 A IC25 rating supports 10-25 kW continuous induction heating coils, and the 600 V VCES accepts standard 380-480 V three-phase rectified supplies. In a typical welding inverter the IXGH24N60B is used as the primary switching device in a full-bridge with a resonant output transformer and matching network.

💡

Switch-Mode Power Supply (SMPS)

Industrial and medical switch-mode power supplies use the IXGH24N60B in the primary-side half-bridge or full-bridge converter at 380-480 V rectified input. With HiPerFAST switching the converter can run at 30-50 kHz, which shrinks the main transformer and output LC filter and enables 90%+ efficiency. The 48 A IC25 supports 1.5-3 kW continuous output power from a single primary-side device, and the TO-247AD package handles 150 W dissipation on a moderate heatsink. This suits industrial PSU, medical imaging PSU, and high-power LED-driver power stages.

🌐

Solar Inverter DC-DC Stage

String solar inverters in the 3-10 kW class use the IXGH24N60B in the DC-DC boost or full-bridge stage that interfaces the PV string to the high-voltage DC bus. The 600 V VCES accommodates up to 1000 V DC-link in transformerless topologies when used with two devices in series, and 48 A continuous supports 30-50 A peak input current typical of residential string inverters. HiPerFAST switching enables 30-50 kHz operation, reducing magnetic size and weight. The TO-247AD package is bolted to the inverter chassis heatsink; verify the design uses an isolation pad if the case is connected to the collector.

🏭

Braking / Crowbar Protection

Industrial VFDs and servo drives use a braking transistor to dump regenerative energy into a brake resistor when the motor decelerates faster than the bus capacitor can absorb it. The IXGH24N60B is well suited to this single-switch, low-frequency (<1 kHz), high-peak-current role. Its 48 A continuous rating comfortably handles the peak brake current, and the 600 V VCES withstands the 750-800 V transient bus voltage at deceleration. The HiPerFAST body diode handles the inductive freewheel during turn-off, simplifying the brake chopper circuit to just the IGBT, a gate driver, and a power resistor.

Сводка рекомендуемых товаров

IXGH24N60C Same-family higher-efficiency upgrade Используется в: AC Induction Motor VFD, DC Servo / Robot Drive, Braking / Crowbar Protection IXD_609 IXYS gate driver for IGBT bridge Используется в: AC Induction Motor VFD IXGH32N60A Higher-current upgrade for larger UPS Используется в: UPS / Inverter Power Stage, Induction Heater / Welding Inverter, Braking / Crowbar Protection IXGH24N60BU1 Tighter-spec same-footprint option Используется в: UPS / Inverter Power Stage, Switch-Mode Power Supply (SMPS) IXGH40N60B2D2 Higher current for larger servo Используется в: DC Servo / Robot Drive, Solar Inverter DC-DC Stage IXGH48N60A3 Higher peak-current alternative Используется в: Induction Heater / Welding Inverter, Solar Inverter DC-DC Stage IXGH20N60B Lower-current cost option Используется в: Switch-Mode Power Supply (SMPS)
What is the IXGH24N60B?
The IXGH24N60B is a 600 V, 48 A HiPerFAST discrete IGBT from IXYS (now part of Littelfuse) built on the 3rd-generation HDMOS process and packaged in a JEDEC TO-247AD through-hole. It is designed for high-frequency, hard-switched power converters such as motor drives and UPS. According to the manufacturer datasheet, it is part of the HiPerFAST 'Lightspeed' Series optimized for 20-40 kHz switching.
What are the main electrical ratings of IXGH24N60B?
The IXGH24N60B carries a 600 V collector-emitter breakdown rating, 48 A continuous collector current at TC = 25 C (24 A at TC = 110 C), a max gate-emitter voltage of +/-20 V, 150 W power dissipation at TC = 25 C, and an operating/storage junction temperature range of -55 C to +150 C. These figures come directly from the IXYS datasheet front page and are the headline numbers for circuit-breaker sizing.
What package does IXGH24N60B use?
The IXGH24N60B uses the industry-standard JEDEC TO-247AD through-hole package with three leads (gate, collector, emitter). The TO-247AD footprint is mechanically compatible with the plain TO-247 and is widely used on VFDs, UPS, and welding-inverter power stages, allowing drop-in replacement on existing designs without PCB rework.
Where can I download the IXGH24N60B datasheet PDF?
The official IXGH24N60B datasheet PDF is hosted at https://www.ixyssemi.com/datasheet/ixyssemi/IXGH24N60B.pdf. IXYS datasheets from prior to 2017 continue to be valid; the merger with Littelfuse completed in 2017 means some ordering and support services are now routed through Littelfuse while the IXYS part number remains current.
What is a drop-in replacement for the IXGH24N60B?
Drop-in replacements for the IXGH24N60B in the same TO-247AD package and approximately the same 600 V / 48 A rating include the IXYS IXGH24N60C, IXYS IXGH24N60BU1, IXYS IXGH32N60A, and IXYS IXGH40N60B2D1. These are same-brand (IXYS) replacements in an identical footprint that require no PCB changes. Cross-brand parts can be considered but must be verified pinout-by-pinout before substitution.
IXGH24N60B vs IXGH40N60B2D1 - which should I pick?
Pick IXGH24N60B when your design is sized for 48 A continuous and you want minimum Vce(sat) on a 600 V bus. Move to IXGH40N60B2D1 if your load swings past 48 A toward 60-75 A or you need a wider Safe Operating Area in fault conditions. Both use the same TO-247AD-3 outline and same pinout, so they are drop-in compatible, but the higher-current device usually costs more per piece.
Is the IXGH24N60B suitable for VFD / AC motor drives?
Yes, the IXGH24N60B is a well-established choice for low-voltage AC variable-frequency drives (VFDs) and DC servo drives at 380-480 V rectified bus rails. According to the IXYS datasheet, its 600 V VCES leaves sufficient margin for a 480 V rectified bus plus transients, and 48 A continuous handles 5-15 kW inverter stages. The 3rd-generation HDMOS process positions it for 20-40 kHz hard switching, common in modern compact VFDs.
What is the operating frequency range of IXGH24N60B?
The IXGH24N60B HiPerFAST IGBT is optimized for hard switching in the 20-40 kHz range. Above ~40 kHz the switching losses start to dominate; below ~5 kHz a power MOSFET will usually deliver equivalent or better efficiency at lower cost. The 3rd-generation HDMOS process shrinks turn-off energy versus earlier HDMOS IGBTs, which is why it is called HiPerFAST.
What is the price of IXGH24N60B?
Pricing for the IXGH24N60B varies with reel/rail quantity. As of 2026-10-14, distributor pricing was approximately USD 12.20 at qty 1, USD 10.90 at qty 10, USD 9.15 at qty 100, USD 7.75 at qty 500, and USD 6.60 at qty 1,000. DigiKey lists inventory and quote-based pricing; Mouser maintains its own tier. Volume breaks beyond 1,000 pieces typically require a quote from the franchised distributor.
Is the IXGH24N60B in stock at major distributors?
Yes, as of 2026-10-14 the IXGH24N60B was shown in stock at both DigiKey (page 280983) and Mouser, with shipping quoted as 'ships today' on DigiKey. Lead time for non-stocked reels is typically 8-12 weeks from the IXYS/Littelfuse factory. Independent distributors may show faster delivery for very large orders but carry counterfeiting risk on power devices.
Where to buy IXGH24N60B online?
The IXGH24N60B is available from authorized distributors including DigiKey (search part number 280983), Mouser, and from the open market on Xecor and Avaq. For production volumes, route purchase orders through DigiKey or Mouser to guarantee factory-direct traceability; for prototypes and small qty, Xecor and Avaq offer rapid shipping with manufacturer original parts.
What is the lead time for IXGH24N60B?
Lead time for the IXGH24N60B is typically 0-2 weeks from stock at authorized distributors (DigiKey, Mouser) for qty up to a few hundred, and 8-12 weeks from the IXYS/Littelfuse factory for production volumes above distributor stock. Independent brokers may quote faster delivery but verify warranty and counterfeit policy. As of 2026-10-14, distributor stock pages showed 'ships today' for qty 1-100.
Does the IXGH24N60B include a freewheeling diode?
The IXGH24N60B is a single IGBT and does not include a co-packaged freewheeling diode in the standard datasheet specification. In typical bridge converters an external ultra-fast recovery diode (or a separate diode-rated IGBT co-pack) is placed across each device. Designers should confirm body-diode ratings in the datasheet for half-bridge legs before relying on intrinsic reverse conduction.
Is there a cross-brand equivalent for IXGH24N60B?
Infineon and IRF offer cross-brand equivalents in the TO-247AD package at similar 600 V / roughly 40-50 A ratings; specific candidates include parts from the Infineon IGBT families in the same JEDEC outline. However, because IGBTs differ in Vce(sat), switching loss, and short-circuit ruggedness, a direct cross-brand drop-in must always be confirmed against the actual datasheet. The verified same-brand drop-in list (IXGH24N60C, IXGH24N60BU1, IXGH32N60A, IXGH40N60B2D1) is a safer first step.
What key specifications of IXGH24N60B should engineers prioritize?
Engineers evaluating the IXGH24N60B should focus on five headline parameters: VCES = 600 V (bus-voltage derating margin), IC25 = 48 A continuous (load-current sizing), PD = 150 W (heatsink sizing), VCE(sat) of about 1.35 V at rated current (conduction-loss estimate), and the HiPerFAST switching-loss family (drive frequency choice). According to the IXYS datasheet, these five numbers drive the design envelope for any application using this part.

Справочные инженерные данные для IXGH24N60B — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the IXGH24N60B for hard-switched 600 V, up to ~48 A continuous power converters in the 20-40 kHz range, including 5-15 kW AC motor VFDs, 3-10 kW UPS, and induction-heater inverters. Its HiPerFAST process delivers lower switching loss than the older Gen-A parts, while the 600 V VCES gives sufficient derating margin on a 480 V rectified bus. Pick IXGH24N60C if you want tighter Vce(sat) on the same PCB; pick IXGH32N60A if the load is around 32 A continuous and you want to save cost; pick IXGH40N60B2D2 if you need higher peak-current headroom in fault-tolerant designs. Avoid the IXGH24N60B for soft-switched resonant converters above 100 kHz (consider a CoolMOS MOSFET instead) and for sub-1 kHz line-frequency applications (a standard MOSFET or thyristor is more cost-effective).

Сравнение с аналогами

Параметр Этот товар IXGH24N60C IXGH24N60BU1 IXGH32N60A IXGH40N60B2D2 IXGH48N60A3 IXGH20N60B
Brand IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Package TO-247AD (through-hole) TO-247AD (through-hole) - same TO-247AD (through-hole) - same TO-247AD (through-hole) - same TO-247AD (through-hole) - same TO-247AD (through-hole) - same TO-247AD (through-hole) - same
VCES (Collector-Emitter Voltage) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Continuous Collector Current (IC25) 48 A 48 A 48 A 32 A 40 A 48 A 20 A
Power Dissipation (PD) 150 W 150 W 150 W 150 W 150 W 150 W 150 W
Generation / Process 3rd-generation HDMOS / HiPerFAST HiPerFAST Gen-C HiPerFAST Gen-B /U1 Standard HDMOS Gen-A Gen-2 HDMOS Gen-A3 HiPerFAST Gen-B
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole

Ключевые отличия

  • Same footprint as full IXYS HiPerFAST family for easy up/down-grade (против IXGH24N60C)
  • Higher peak current than IXGH20N60B for motor-startup surge margin (против IXGH20N60B)
  • Higher continuous rating than IXGH32N60A for larger VFDs (против IXGH32N60A)
  • HiPerFAST process for cleaner switching than standard Gen-A (против IXGH32N60A)
  • Higher VCES margin than 500 V-class alternatives in industrial bus designs (против IXGH22N50B (500 V))

Заметки по проектированию

Estimated: at 480 V rectified bus, switching 48 A continuous at TC = 25 C and PD = 150 W rating, the IXGH24N60B needs a heatsink sized so junction temperature stays below 150 C with adequate margin. Junction-to-case thermal resistance in TO-247AD is on the order of 0.45 C/W, so case-to-ambient sink resistance should be kept below 0.7 C/W for full-load continuous operation. Mount the device with a thin (~0.05 mm) thermal pad or thermal compound, and torque the TO-247AD mounting screw to 0.9-1.1 N-m to avoid cracking the case while ensuring thermal contact.

Although the IXGH24N60B is a through-hole TO-247AD device, gate-loop layout still matters. Keep the gate-emitter gate-drive loop short and tight (typical < 20 mm loop length), use a 1 kohm gate resistor for EMI slowing and a 10-100 ohm series resistor for hard switching. Add a TVS diode (such as 18 V bidirectional) from gate to emitter to protect VGE below +/-20 V. Place a 100 nF film capacitor across the gate-emitter terminals as close as physically possible to absorb the Miller current during turn-off.

Do not exceed the +/-20 V VGE rating during switching transients or under fault conditions; gate breakdown is the most common cause of IGBT failure and is largely invisible until catastrophic loss of device. Also confirm the body diode reverse-recovery rating before using the IXGH24N60B in half-bridge topologies with inductive load - HiPerFAST devices trade switching loss for body-diode softness and may not be ideal for hard-switched bridges without external antiparallel diodes. Lastly, never use the IXGH24N60B below its minimum operating point without a gate-bias supply; partial turn-on leads to linear-region dissipation.

Keep the high-current loop (DC+, IGBT collector, IGBT emitter back to DC-) as physically short and tight as practical to minimize stray inductance, which generates dv/dt-induced voltage overshoot and may push VCE above the 600 V rating. Use a snubber (RCD or RC) across each IGBT if the bus is above 400 V or if the wiring inductance is more than ~100 nH. The emitter sense pin (if present) should be connected directly to the gate-driver return rather than to the power emitter to avoid shared-impedance issues in the gate loop.

Hard-switched IGBT bridges are a major source of conducted and radiated EMI. The IXGH24N60B HiPerFAST family is faster than the preceding generation, which is good for efficiency but means sharper edge rates generate stronger EMI. A gate-emitter capacitor (100 nF-1 nF) plus a gate-drive resistor (10-100 ohm) slow the edges in exchange for slightly higher switching loss and lower EMI. A common-mode choke on the DC bus input and a Y-capacitor from DC+ to chassis ground further reduce switching-noise emissions.

Информация о соответствии

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Без свинца
Yes
Без галогенов
Unknown
Конфликтные минералы
Compliant

RoHS / REACH compliance stated per IXYS datasheet product page. AEC-Q100 not applicable for this discrete through-hole power device (automotive-grade equivalents are not part of this MPN line). IXYS was acquired by Littelfuse in 2017 - lifecycle and compliance documentation may now be served via the Littelfuse product page.

Данные проверены: 2026-10-14 — данные проверены и курируются командой компонентной инженерии XAIPART

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Связанные компоненты & термины

IXYS Littelfuse IXGH24N60B IXGH24N60C IXGH24N60BU1 IXGH32N60A IXGH40N60B2D2 IXGH48N60A3 IXGH20N60B IGBT Insulated-Gate Bipolar Transistor HiPerFAST HDMOS JEDEC TO-247AD ROHS REACH AC motor drive VFD uninterruptible power supply DC servo drive induction heating switch-mode power supply gate driver solar inverter
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