IXGH24N60B - 600V 48A HiPerFAST IGBT TO-247AD | IXYS
부품 번호: IXGH24N60B ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.2 | $12.20 |
| 10 | $10.9 | $109.00 |
| 100 | $9.15 | $915.00 |
| 500 | $7.75 | $3,875.00 |
| 1,000 | $6.6 | $6,600.00 |
IXGH24N60B 개요
An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor in the voltage-controlled switch family. It sits between power MOSFETs and Darlington bipolar transistors in the application taxonomy: IGBT -> insulated-gate bipolar transistor -> power transistor -> discrete semiconductor -> power electronics. The IGBT merges a MOSFET-style isolated gate (high input impedance, voltage-driven, easy to interface with logic-level or standard 15 V gate drivers) with a bipolar output structure that gives it a much lower on-state voltage drop than a comparable high-voltage MOSFET, especially at 600 V and above.
Key features include a 600 V collector-emmitter breakdown rating, 48 A continuous collector current at 25 C case temperature (24 A at 110 C), a peak single-pulse collector current that supports high di/dt transient loads, switching frequencies suitable for 20-40 kHz hard-switched converters, and an internal gate structure that simplifies gate-driver design. The TO-247AD package provides a low thermal resistance from junction to case, supporting 150 W of dissipation when properly mounted.
Architecturally, the IXGH24N60B uses a PT/NPT-style vertical die, a freewheeling body-diode region rated for the same 48 A, and an internal gate resistance chosen for clean turn-on at VGE = 15 V. The 3rd-generation HDMOS process is engineered so the device loses far less energy per switching cycle than earlier HDMOS generations, which is why this part is commonly positioned in the 20-100 kHz hard-switched range rather than only at line-frequency.
Typical applications include AC induction motor speed controls (VFDs), uninterruptible power supplies (UPS), DC servo and robot drives, switch-mode power supplies, welding inverters, and induction heating. In each of these, the IXGH24N60B is used in the main switching leg where 600 V bus rails and tens of amps of switching current are required at frequencies higher than a power MOSFET can comfortably deliver, but where the low on-state drop of an IGBT is preferred.
The primary design trade-off when choosing the IXGH24N60B is between switching loss and conduction loss. Because HiPerFAST IGBTs trade slightly higher switching loss for lower Vce(sat), they are best applied where the switching frequency stays below ~40 kHz. Above that, a CoolMOS-class MOSFET may be a better fit; below 5 kHz, a standard MOSFET or even a Darlington can be lower cost.
This page synthesizes distributor pricing, current stock across DigiKey and Mouser, package-level drop-in alternatives, and practical design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers an at-a-glance answer to where the IXGH24N60B fits and what can replace it.
드롭인 대체품: IXGH24N60B — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IXGH24N60C
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH24N60BU1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH32N60A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH40N60B2D2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH48N60A3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH20N60B
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXGH24N60B 최대 정격 & 전기적 특성
| Manufacturer | IXYS (now part of Littelfuse) |
| Product Type | Single discrete IGBT (Insulated-Gate Bipolar Transistor) |
| Technology | 3rd generation HDMOS HiPerFAST |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC25) | 48 A (TC = 25 C) |
| Continuous Collector Current (IC110) | 24 A (TC = 110 C) |
| Pulsed Collector Current (ICM) | Data per datasheet SOA curve; transient rating per RBSOA |
| Gate-Emitter Voltage (VGES) | +/-20 V (max) |
| Power Dissipation (PD) | 150 W (TC = 25 C) |
| Operating Junction Temperature (TJ) | -55 C to +150 C |
| Storage Temperature (Tstg) | -55 C to +150 C |
| 패키지 | TO-247AD through-hole (JEDEC) |
| 실장 유형 | Through Hole |
| Switching Family | HiPerFAST / Lightspeed Series |
| RoHS 상태 | Compliant (Details per datasheet) |
IXGH24N60B 핀 구성
| 핀 1 | Gate (G) — Gate control input; drive at +15 V to turn on, 0 V to turn off; do not exceed +/-20 V VGE |
| 핀 2 | Collector (C) — Main current terminal and high-voltage bus connection (drain-side) |
| 핀 3 | Emitter (E) — Main current return terminal (source-side); connect to gate-driver return |
Forward Bias 안전 동작 영역 (FBSOA) and Reverse Bias SOA (RBSOA) - HiPerFAST
일반적인 애플리케이션
IXGH24N60B 적합 용도: 7 애플리케이션s: AC Induction Motor VFD, UPS / Inverter Power Stage, DC Servo / Robot Drive, Induction Heater / Welding Inverter, Switch-Mode Power Supply (SMPS), Solar Inverter DC-DC Stage, Braking / Crowbar Protection.
AC Induction Motor VFD
The IXGH24N60B is well matched to 380-480 V AC variable-frequency drives for three-phase induction motors in the 5-15 kW range. The 600 V VCES leaves derating margin for a 480 V rectified bus plus switching transients, and the 48 A continuous IC25 handles the inverter-stage current with proper heatsinking. Its HiPerFAST process keeps turn-off losses down so 20-40 kHz hard switching is feasible, shrinking the LC filter and overall VFD size. In a typical VFD inverter leg the IXGH24N60B sits between the DC bus and the motor phase, switched by a gate driver running at +15 V on the gate and a small RC snubber for dv/dt control.
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UPS / Inverter Power Stage
Online UPS units and grid-tie inverters in the 3-10 kW class use the IXGH24N60B in the H-bridge or three-phase IGBT bridge. With 48 A continuous and 600 V VCES it can deliver 5-10 kVA from a 192-384 V battery stack while leaving voltage margin for cold-start inrush. The HiPerFAST switching family supports 20-40 kHz hard switching which lets the UPS use a smaller high-frequency transformer and lighter magnetics. The TO-247AD package is bolted directly to an aluminum heatsink, simplifying thermal design for tower and rack-mount UPS systems.
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DC Servo / Robot Drive
Industrial servo amplifiers and robotic-arm drives use the IXGH24N60B as the main switching element in a four-quadrant H-bridge that drives a brushless DC servo motor. The 48 A IC25 rating covers the 15-30 A continuous servo current with room for peak torque transients, and the 600 V VCES accepts 400 V DC bus rails standard in industrial servo. HiPerFAST switching speeds enable tight current-loop bandwidth, critical for precision motion control. The TO-247AD through-hole package bolts directly to the servo amplifier chassis for clean thermal management.
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Induction Heater / Welding Inverter
Resonant inverter topologies for induction heating and welding machines rely on the IXGH24N60B to handle high di/dt switching at 30-100 kHz. Although HiPerFAST is optimized for hard-switched use, its rugged RBSOA makes it tolerant of clamped-inductive-load switching common in resonant tanks. The 48 A IC25 rating supports 10-25 kW continuous induction heating coils, and the 600 V VCES accepts standard 380-480 V three-phase rectified supplies. In a typical welding inverter the IXGH24N60B is used as the primary switching device in a full-bridge with a resonant output transformer and matching network.
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Switch-Mode Power Supply (SMPS)
Industrial and medical switch-mode power supplies use the IXGH24N60B in the primary-side half-bridge or full-bridge converter at 380-480 V rectified input. With HiPerFAST switching the converter can run at 30-50 kHz, which shrinks the main transformer and output LC filter and enables 90%+ efficiency. The 48 A IC25 supports 1.5-3 kW continuous output power from a single primary-side device, and the TO-247AD package handles 150 W dissipation on a moderate heatsink. This suits industrial PSU, medical imaging PSU, and high-power LED-driver power stages.
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Solar Inverter DC-DC Stage
String solar inverters in the 3-10 kW class use the IXGH24N60B in the DC-DC boost or full-bridge stage that interfaces the PV string to the high-voltage DC bus. The 600 V VCES accommodates up to 1000 V DC-link in transformerless topologies when used with two devices in series, and 48 A continuous supports 30-50 A peak input current typical of residential string inverters. HiPerFAST switching enables 30-50 kHz operation, reducing magnetic size and weight. The TO-247AD package is bolted to the inverter chassis heatsink; verify the design uses an isolation pad if the case is connected to the collector.
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Braking / Crowbar Protection
Industrial VFDs and servo drives use a braking transistor to dump regenerative energy into a brake resistor when the motor decelerates faster than the bus capacitor can absorb it. The IXGH24N60B is well suited to this single-switch, low-frequency (<1 kHz), high-peak-current role. Its 48 A continuous rating comfortably handles the peak brake current, and the 600 V VCES withstands the 750-800 V transient bus voltage at deceleration. The HiPerFAST body diode handles the inductive freewheel during turn-off, simplifying the brake chopper circuit to just the IGBT, a gate driver, and a power resistor.
추천
추천 제품 요약
엔지니어링 참조 데이터: IXGH24N60B — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IXGH24N60C | IXGH24N60BU1 | IXGH32N60A | IXGH40N60B2D2 | IXGH48N60A3 | IXGH20N60B |
|---|---|---|---|---|---|---|---|
| Brand | IXYS | IXYS | IXYS | IXYS | IXYS | IXYS | IXYS |
| Package | TO-247AD (through-hole) | TO-247AD (through-hole) - same | TO-247AD (through-hole) - same | TO-247AD (through-hole) - same | TO-247AD (through-hole) - same | TO-247AD (through-hole) - same | TO-247AD (through-hole) - same |
| VCES (Collector-Emitter Voltage) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC25) | 48 A | 48 A | 48 A | 32 A | 40 A | 48 A | 20 A |
| Power Dissipation (PD) | 150 W | 150 W | 150 W | 150 W | 150 W | 150 W | 150 W |
| Generation / Process | 3rd-generation HDMOS / HiPerFAST | HiPerFAST Gen-C | HiPerFAST Gen-B /U1 | Standard HDMOS Gen-A | Gen-2 HDMOS | Gen-A3 | HiPerFAST Gen-B |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
주요 차별점
- Same footprint as full IXYS HiPerFAST family for easy up/down-grade (vs IXGH24N60C)
- Higher peak current than IXGH20N60B for motor-startup surge margin (vs IXGH20N60B)
- Higher continuous rating than IXGH32N60A for larger VFDs (vs IXGH32N60A)
- HiPerFAST process for cleaner switching than standard Gen-A (vs IXGH32N60A)
- Higher VCES margin than 500 V-class alternatives in industrial bus designs (vs IXGH22N50B (500 V))
설계 노트
Estimated: at 480 V rectified bus, switching 48 A continuous at TC = 25 C and PD = 150 W rating, the IXGH24N60B needs a heatsink sized so junction temperature stays below 150 C with adequate margin. Junction-to-case thermal resistance in TO-247AD is on the order of 0.45 C/W, so case-to-ambient sink resistance should be kept below 0.7 C/W for full-load continuous operation. Mount the device with a thin (~0.05 mm) thermal pad or thermal compound, and torque the TO-247AD mounting screw to 0.9-1.1 N-m to avoid cracking the case while ensuring thermal contact.
Although the IXGH24N60B is a through-hole TO-247AD device, gate-loop layout still matters. Keep the gate-emitter gate-drive loop short and tight (typical < 20 mm loop length), use a 1 kohm gate resistor for EMI slowing and a 10-100 ohm series resistor for hard switching. Add a TVS diode (such as 18 V bidirectional) from gate to emitter to protect VGE below +/-20 V. Place a 100 nF film capacitor across the gate-emitter terminals as close as physically possible to absorb the Miller current during turn-off.
Do not exceed the +/-20 V VGE rating during switching transients or under fault conditions; gate breakdown is the most common cause of IGBT failure and is largely invisible until catastrophic loss of device. Also confirm the body diode reverse-recovery rating before using the IXGH24N60B in half-bridge topologies with inductive load - HiPerFAST devices trade switching loss for body-diode softness and may not be ideal for hard-switched bridges without external antiparallel diodes. Lastly, never use the IXGH24N60B below its minimum operating point without a gate-bias supply; partial turn-on leads to linear-region dissipation.
Keep the high-current loop (DC+, IGBT collector, IGBT emitter back to DC-) as physically short and tight as practical to minimize stray inductance, which generates dv/dt-induced voltage overshoot and may push VCE above the 600 V rating. Use a snubber (RCD or RC) across each IGBT if the bus is above 400 V or if the wiring inductance is more than ~100 nH. The emitter sense pin (if present) should be connected directly to the gate-driver return rather than to the power emitter to avoid shared-impedance issues in the gate loop.
Hard-switched IGBT bridges are a major source of conducted and radiated EMI. The IXGH24N60B HiPerFAST family is faster than the preceding generation, which is good for efficiency but means sharper edge rates generate stronger EMI. A gate-emitter capacitor (100 nF-1 nF) plus a gate-drive resistor (10-100 ohm) slow the edges in exchange for slightly higher switching loss and lower EMI. A common-mode choke on the DC bus input and a Y-capacitor from DC+ to chassis ground further reduce switching-noise emissions.
규정 준수 정보
RoHS / REACH compliance stated per IXYS datasheet product page. AEC-Q100 not applicable for this discrete through-hole power device (automotive-grade equivalents are not part of this MPN line). IXYS was acquired by Littelfuse in 2017 - lifecycle and compliance documentation may now be served via the Littelfuse product page.
