JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie
Артикул: JMTG100N06A ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.15 | $450,00 |
JMTG100N06A Обзор
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage creates an inversion layer that conducts current between drain and source. Trench MOSFET technology deepens the gate structure into the silicon, increasing cell density and reducing both R(DS(on)) per unit area and gate charge. The JMTG100N06A belongs to the discrete-semiconductor hierarchy: MOSFET → power MOSFET → trench MOSFET → N-channel enhancement-mode MOSFET, and is typically used as a low-side or high-side switch in power-conversion blocks.
Key differentiating features include a typical V(GS(th)) of 1.5 V for logic-level-friendly driving, 100 % UIS (unclamped inductive switching) tested avalanche ruggedness, 100 % V(DS) tested production screening, Pb-free plating, halogen-free construction, and RoHS compliance. The combination of low R(DS(on)), high peak current capability, and the thermally enhanced PDFN5x6 package with an exposed drain pad enables high power density without external heatsinking in many applications.
The device's low gate charge and low R(DS(on)) minimize both conduction and switching losses, which is critical for hard-switched converters, motor-drive H-bridges, and synchronous-rectification stages. The trench cell structure reduces Miller charge, allowing faster turn-on/turn-off transitions and lower driver loss. The 8-lead PDFN5x6 footprint is electrically optimized so that pins 5–8 are the drain, providing a low-impedance thermal and electrical path to the PCB copper pour.
Typical applications include DC-DC converter high-side and low-side switches, BLDC and brushed-DC motor drivers, battery protection and load switches, e-bike and e-scooter power stages, LED driving circuits, and power OR-ing / hot-swap controllers. The 60 V rating provides ample margin for 12 V and 24 V bus systems, while the 55 A continuous current supports multi-hundred-watt power stages.
A key design consideration is thermal management: although the PDFN5x6 has a low junction-to-case thermal resistance, total dissipation is dominated by the PCB copper area beneath the exposed pad. At 7.7 mΩ and 30 A continuous current, conduction loss is ~7 W, so at least 1 square inch of 2 oz copper on a multi-layer board is recommended to keep the junction rise below 50 °C above ambient.
This page synthesizes JieJie datasheet specifications, distributor pricing, drop-in alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluation.
Аналоги без доработки для JMTG100N06A — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с JMTG100N06A (тот же форм-фактор и посадочное место) — отличается по Package, Configuration, Manufacturer, Technology, Mounting Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
JMTG100N06D
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
JMTC100N06A
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
NTMFS5C646NLT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC0901NSATMA1
✅ Прямая замена✓ В наличии
$0.78 / шт.
Открыть даташит →DMN3190LDW-7
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.1 / шт.
Открыть даташит →JMTG100N06A Максимальные параметры и электрические характеристики
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd |
| Тип транзистора | N-Channel Power Trench MOSFET |
| Drain-Source Voltage V(DSS) | 60 V |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V |
| Корпус | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) |
| Тип монтажа | Surface Mount |
| Plating | Pb-free |
| Без галогенов | Yes |
| RoHS | Compliant |
| UIS (Avalanche) Tested | 100 % |
| V(DS) Tested | 100 % |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive |
Конфигурация выводов JMTG100N06A
| Контакт 1 | GATE — Gate control input |
| Контакт 2 | SOURCE — Source connection (pin 2) |
| Контакт 3 | SOURCE — Source connection (pin 3) |
| Контакт 4 | SOURCE — Source connection (pin 4) |
| Контакт 5 | DRAIN — Drain (pin 5, also exposed pad) |
| Контакт 6 | DRAIN — Drain (pin 6, also exposed pad) |
| Контакт 7 | DRAIN — Drain (pin 7, also exposed pad) |
| Контакт 8 | DRAIN — Drain (pin 8, also exposed pad) |
Область безопасной работы (DC, T(C)=25 °C)
Типичное применение
JMTG100N06A подходит для 6 применениеs: DC-DC Converter High-Side / Low-Side Switch, BLDC and Brushed-DC Motor Drive, Battery Protection and Load Switch, E-Bike and E-Scooter Power Stage, LED Driver High-Current Stage, Hot-Swap and Power OR-ing Controller.
DC-DC Converter High-Side / Low-Side Switch
The JMTG100N06A is well suited as the synchronous or control FET in 12 V/24 V buck and boost DC-DC converter stages. Its 7.7 mΩ typical R(DS(on)) at V(GS)=10 V keeps conduction loss under 7 W at 30 A, and the 60 V V(DSS) provides generous headroom above 24 V industrial bus voltages including transient spikes. The trench cell design minimizes Q(g) and Q(gd) for fast switching, supporting converter switching frequencies from 100 kHz to 500 kHz. Place the part on the low-side with a 1 sq. in. 2 oz copper pour to keep the junction below 100 °C at full load.
Рекомендуется
BLDC and Brushed-DC Motor Drive
The JMTG100N06A handles the half-bridge switching positions in BLDC FOC (field-oriented control) and brushed-DC H-bridge motor drivers operating from 12 V to 24 V battery rails. The 55 A continuous drain current and 7.7 mΩ R(DS(on)) at V(GS)=10 V support multi-hundred-watt motor stages. V(DSS)=60 V absorbs motor-winding inductive flyback, and the 1.5 V typical V(GS(th)) enables logic-level gate driving from 3.3 V microcontrollers via a gate-driver bootstrap stage. Operate V(GS) at 10 V for full enhancement and lowest R(DS(on)).
Рекомендуется
Battery Protection and Load Switch
As a load-disconnect or battery-protection switch in 12 V/24 V Li-ion and lead-acid battery packs, the JMTG100N06A offers 60 V V(DSS) for safety margin and 7.7 mΩ R(DS(on)) to minimize voltage drop and heat dissipation. At 30 A continuous load, conduction loss is approximately 6.9 W, so the PDFN5x6 exposed pad must be soldered to at least 1 sq. in. of 2 oz copper. Its 100 % UIS-tested avalanche rating provides robustness against the inductive transients encountered when disconnecting a load with stored magnetic energy.
Рекомендуется
E-Bike and E-Scooter Power Stage
The JMTG100N06A is widely used as the low-side or high-side switch in 36 V / 48 V e-bike and e-scooter motor controllers, where its 60 V V(DSS) and 55 A I(D) cover the 13S / 15S Li-ion battery range with headroom. The 7.7 mΩ R(DS(on)) keeps continuous 30 A controller dissipation below 7 W, manageable on the aluminum-clad PCB common in these designs. The PDFN5x6 footprint allows compact controller layouts, and the 1.5 V V(GS(th)) simplifies gate-driver design for low-voltage MCU-derived gate signals.
Рекомендуется
LED Driver High-Current Stage
In high-brightness LED driver applications such as automotive headlamps, architectural lighting, and stage lighting, the JMTG100N06A operates as the linear or PWM-switched current-regulator element. Its 55 A I(D) and 60 V V(DSS) enable driving long series-strings of high-power LEDs from 24 V/48 V supplies. The 7.7 mΩ R(DS(on)) keeps dissipation within the thermal envelope of a properly copper-poured PDFN5x6 footprint. Use PWM dimming at frequencies above 200 Hz to avoid visible flicker.
Рекомендуется
Hot-Swap and Power OR-ing Controller
The JMTG100N06A functions as the pass element in 12 V/24 V hot-swap controllers and power OR-ing circuits, where its 7.7 mΩ R(DS(on)) minimizes voltage drop and its 60 V V(DSS) protects against transients. The trench MOSFET's low Q(g) supports fast turn-off during fault conditions, limiting inrush current and back-feed events. The PDFN5x6-8L footprint allows compact PCB layouts in server, telecom, and industrial redundant-power designs. Always pair with a TVS clamp for input transient protection above 60 V.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для JMTG100N06A — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | JMTG100N06D | NTMFS5C646NLT | BSC0901NS |
|---|---|---|---|---|
| Package | PDFN5x6-8L | PDFN5x6-8L - same | PDFN5x6-8L - same | PDFN5x6-8L - same |
| Brand | JieJie Micro | JieJie Micro | onsemi | Infineon |
| V(DSS) (V) | 60 | 60 | 60 | 60 |
| Continuous I(D) (A) | 55 | 55 | 50 | 50 |
| R(DS(on)) @ 10V (mΩ, typ) | 7.7 | 7.7 (approx, family part) | 6.5 | 9.0 |
| V(GS(th)) typ (V) | 1.5 | 1.5 (approx) | 1.7 | 2.0 |
| UIS / Avalanche Tested | Yes (100%) | Yes | Yes | Yes |
| Halogen-Free / RoHS | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
| Approx. 1k price (USD, as of 2026-10-08) | 0.18 | 0.20 | 0.55 | 0.48 |
Ключевые отличия
- Lower R(DS(on)) at 4.5 V gate drive (против BSC0901NS)
- 100 % UIS tested avalanche ruggedness (против NTMFS5C646NLT)
- Lower 1k-piece pricing as a domestic Chinese brand (против NTMFS5C646NLT)
Заметки по проектированию
Estimated: at 30 A continuous current and R(DS(on)) = 7.7 mΩ, conduction loss is I²·R = 30² × 0.0077 ≈ 6.9 W. The PDFN5x6-8L has a low R(θJC) but a relatively high R(θJA) without PCB copper; solder the exposed pad to at least 1 sq. in. of 2 oz copper on a multi-layer board to keep the junction temperature rise below 50 °C. Add thermal vias under the exposed pad to inner copper planes for additional heat spreading.
The PDFN5x6-8L exposes the drain on the package bottom (pins 5–8 and the thermal pad). Place a continuous copper plane on the top layer and stitch thermal vias to inner power/ground planes. Keep the gate-trace short and use a 10 kΩ pull-down on the gate to prevent unintended turn-on during power-up. Source-sense connections should be Kelvin-routed to the actual source pins (1–4), not the exposed pad, for accurate current sensing.
Do not exceed V(GS) of ±20 V (per industry-standard trench MOSFET limits; consult JieJie datasheet Rev 1.4 for the JMTG100N06A absolute maximum). Add a gate-source Zener clamp (typically 15 V) for protection against drain-voltage transients coupled through the Miller capacitance. Avalanche energy in the UIS test is given as T(J)=25 °C, V(DD)=30 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A, so the part can absorb E_AS = 0.5·L·I² = 0.5·0.5e-3·22² ≈ 121 mJ.
Информация о соответствии
RoHS-compliant and Pb-free plating per JieJie datasheet Rev 1.4. Halogen-free per JieJie product family disclosure. AEC-Q100 qualification status is not stated in the verified web data; the JMTG100N06A appears to be a commercial/industrial grade part - confirm with JieJie for automotive applications.
