MCP1810T-30I/J8A - 150mA, 3.0V Ultra-Low Iq LDO | Microchip
Артикул: MCP1810T-30I/J8A ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.55 | $0,55 |
| 10 | $0.5 | $5,00 |
| 100 | $0.45 | $45,00 |
| 500 | $0.4 | $200,00 |
| 1.000 | $0.35 | $350,00 |
MCP1810T-30I/J8A Обзор
An LDO (Low-Dropout) linear regulator is a type of voltage regulator that maintains a stable output voltage even when the input voltage is very close to the output voltage. Within the broader power management hierarchy, LDOs sit below switching regulators because they trade efficiency for low noise - they dissipate the difference between input and output as heat rather than switching it, producing no EMI ripple. The MCP1810 specifically targets battery-powered IoT and always-on applications where quiescent current dominates battery life.
Key differentiating specifications include a 20 nA (typical) quiescent current during operation, a 1 nA (typical) shutdown supply current, a 380 mV dropout at 150 mA load, and an enable pin for sequenced power control. The device maintains 150 mA output for output voltages at or below 3.5 V, and 100 mA for higher output rails in the same family. Its CMOS architecture delivers clean, low-noise power suitable for analog and mixed-signal loads.
Typical applications include single-cell Li-ion powered IoT sensor nodes, wearables and Bluetooth beacons, energy harvesting systems, RTC backup power domains, and always-on microcontroller rails. The 20 nA quiescent current is roughly 1000x lower than typical LDOs, extending coin-cell battery life from months to multiple years in low-duty-cycle applications.
Design consideration: choose the 1 uF ceramic input/output capacitors specified in the manufacturer datasheet - smaller values can compromise loop stability. For battery applications, also note that dropout at 150 mA approaches 380 mV, leaving a usable minimum input of about 3.38 V for a 3.0 V output.
This page synthesizes distributor pricing, drop-in alternatives, application references, and design guidance not found in the standalone datasheet PDF, giving engineers a single source for selection and sourcing of the MCP1810T-30I/J8A.
Аналоги без доработки для MCP1810T-30I/J8A — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MCP1811T-30I/J8A
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MCP1812T-30I/J8A
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MCP1710T-30I/J8A
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MCP1810T-30I/J8A Максимальные параметры и электрические характеристики
| Топология | LDO Linear Regulator (CMOS) |
| Тип выхода | Fixed (3.0 V) |
| Выходное напряжение | 3.0 V |
| Диапазон входного напряжения | 2.5 V to 5.5 V |
| Maximum Output Current (VOUT <= 3.5 V) | 150 mA |
| Maximum Output Current (VOUT > 3.5 V) | 100 mA |
| Напряжение падения | 380 mV at 150 mA |
| Quiescent Current (operating) | 20 nA typical |
| Quiescent Current (shutdown) | 1 nA typical |
| Вывод разрешения | Yes (active-high) |
| Диапазон рабочих температур | -40 C to +85 C (industrial) |
| Корпус | 8-VDFN (2x2 mm) with exposed pad |
| Тип монтажа | Surface Mount |
| Packaging | Tape and Reel (T/R) |
| Уровень MSL | 1 (unlimited floor life at <=30 C / 85% RH) |
| Статус RoHS | Compliant |
| AEC-Q100 Automotive | Not qualified |
Конфигурация выводов MCP1810T-30I/J8A
| Контакт 1 | VIN — Input voltage supply (2.5 V to 5.5 V) |
| Контакт 2 | GND — Ground reference |
| Контакт 3 | SHDN/EN — Shutdown/enable input (active-high; tie to VIN or drive high to enable) |
| Контакт 4 | NC — Not connected (per datasheet) |
| Контакт 5 | NC — Not connected (per datasheet) |
| Контакт 6 | NC — Not connected (per datasheet) |
| Контакт 7 | VOUT — Regulated output voltage (3.0 V fixed) |
| Контакт 8 | EP — Exposed thermal pad (recommended to be tied to GND for thermal dissipation) |
Типичное применение
MCP1810T-30I/J8A подходит для 6 применениеs: Battery-Powered IoT Sensor Nodes, Wearable and Bluetooth Beacon Devices, Real-Time Clock (RTC) Backup Power, Energy Harvesting Power Conditioning, Always-On Microcontroller Rails, Remote Keyless Entry (RKE) and Access Control.
Battery-Powered IoT Sensor Nodes
The MCP1810T-30I/J8A's 20 nA quiescent current makes it ideal for IoT sensor nodes powered by coin cells or energy harvesting. The 3.0 V fixed output rail directly drives low-power MCUs and radios that operate from a 3.0 V supply domain, while the 150 mA peak current handles radio TX bursts. Place the regulator between the battery and the MCU's VDD pin with 1 uF ceramic input and output capacitors; standby drain is so low that battery self-discharge dominates lifetime. Compared to a switching regulator, the LDO adds zero EMI ripple to sensitive analog sensor front-ends.
Рекомендуется
Wearable and Bluetooth Beacon Devices
Wearables and BLE beacons spend most of their life in deep sleep, where quiescent current directly determines battery life. The MCP1810T-30I/J8A delivers 20 nA Iq during sleep and 1 nA in full shutdown, extending CR2032 deployments from months to multiple years. The 3.0 V fixed output matches the typical supply domain of BLE SoCs and low-power sensors. Use the EN pin to fully shut down the regulator during shipping/storage, eliminating parasitic drain. The 8-VDFN (2x2 mm) package fits inside small form-factor wearable housings.
Рекомендуется
Real-Time Clock (RTC) Backup Power
RTC modules typically draw 0.5-2 uA continuously, so the LDO feeding them must consume far less to avoid dominating the budget. The MCP1810T-30I/J8A's 20 nA Iq is roughly 25-100x lower than the RTC itself, making it ideal for RTC backup domains in metering, datalogging, and server baseboard management. The 3.0 V output directly powers 3.0 V RTC chips; for 3.3 V RTCs, use the MCP1810T-33I/J8A variant instead. The 8-VDFN package plus minimal external parts (two 1 uF capacitors) keeps the backup-power subassembly extremely compact.
Рекомендуется
Energy Harvesting Power Conditioning
Energy harvesting systems from solar, thermal, or vibrational sources store microjoules in supercapacitors or thin-film batteries, then need an efficient regulator to deliver a stable rail to the load. The MCP1810T-30I/J8A fits the output side of an energy-harvesting power management IC (PMIC), providing a clean 3.0 V rail with only 20 nA Iq overhead. This way, harvested energy is spent on the load, not on the regulator. The 380 mV dropout at 150 mA handles transient bursts when the harvester output briefly drops near the load voltage.
Рекомендуется
Always-On Microcontroller Rails
Many battery-powered designs keep a low-power MCU always running to wake the system on events, with the main MCU and radio powered down. The MCP1810T-30I/J8A's 20 nA Iq and 1 nA shutdown make it ideal for the always-on rail, while the main rail uses a higher-current regulator or load switch. Use the EN pin to fully power-cycle the main rail when the always-on MCU sleeps. The 3.0 V fixed output matches common low-power ARM Cortex-M0+ supply domains without wasting headroom in a buck regulator.
Рекомендуется
Remote Keyless Entry (RKE) and Access Control
RKE fobs and access-control keycards spend years in standby, transmitting only on button press. The MCP1810T-30I/J8A's 1 nA shutdown current (via the EN pin) eliminates standby drain entirely, preserving the CR2032 cell until use. The 150 mA peak current handles the radio transmission burst. The 8-VDFN package is small enough to fit inside credit-card form factors. Designers can also use the same part in 1.8 V, 2.5 V, or 3.3 V variants of the MCP1810 family for different MCU supply domains.
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Сводка рекомендуемых товаров
Справочные инженерные данные для MCP1810T-30I/J8A — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MCP1811T-30I/J8A | MCP1812T-30I/J8A | MCP1710T-30I/J8A | TPS78230DRVR |
|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Texas Instruments |
| Package | 8-VDFN (2x2) | 8-VDFN (2x2) - same | 8-VDFN (2x2) - same | 8-VDFN (2x2) - same | WSON-6 (2x2) - different |
| Output Voltage | 3.0 V fixed | 3.0 V fixed | 3.0 V fixed | 3.0 V fixed | 3.0 V fixed |
| Quiescent Current | 20 nA typical | 20 nA | 20 nA | 200 nA typical | 500 nA typical |
| Enable Pin | Yes (active-high SHDN) | Yes | No (always-on) | Yes | Yes |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +125 C |
| Approx. Price (1000-pc) | $0.35 - $0.45 | $0.35 - $0.45 | $0.35 - $0.45 | $0.40 - $0.50 | $0.40 - $0.55 |
Ключевые отличия
- 20 nA quiescent current - 25x lower than TI TPS78230 (против TPS78230DRVR)
- 1 nA shutdown current for shipping/storage modes (против MCP1812T-30I/J8A)
- Wide input voltage headroom up to 5.5 V (против MCP1700T-3002E/TT)
Заметки по проектированию
Place 1 uF X7R or X5R ceramic capacitors as close as possible to the VIN and VOUT pins. Per Microchip datasheet 20005623B, ESR below 200 milliohm is required for loop stability - avoid Y5V or Z5U dielectrics which have higher ESR and temperature coefficient. For battery applications with high source impedance (coin cells), the input capacitor helps suppress transient load steps that would otherwise appear at the output. Estimated: at 150 mA load with 1 uF input cap, transient suppression bandwidth is approximately 50 kHz.
At VIN=5 V and VOUT=3 V with 150 mA load, the LDO dissipates approximately (5-3) * 0.15 = 0.3 W continuously. The 8-VDFN package exposed thermal pad (EP, pin 8) must be soldered to a ground copper pour of at least 25 mm^2 to keep theta_JA low. Without the EP properly soldered, junction temperature can rise above 85 C at maximum load. Always tie the EP to GND - leaving it floating voids thermal performance and may violate reliability targets.
Do not leave the SHDN/EN pin floating - the MCP1810 requires a defined logic level. Tie it to VIN through a 100 kohm resistor if driven by a high-impedance source, or directly to VIN if always enabled. When using SHDN for power-cycling, observe the 10 us enable time before the output reaches regulation - wake-up latency may affect system timing budgets. Also note that the 380 mV dropout means a single-cell Li-ion battery near end-of-life (3.0 V) will drop out when loaded at 150 mA - derate load or use the 3.3 V variant with wider dropout margin.
Route the EP (pin 8) thermal pad to a ground pour with multiple thermal vias (at least 4 vias on 0.5 mm pitch) to inner ground layers. Keep the input and output traces short and wide to minimize parasitic inductance. Place the input cap on the same layer as the IC, with the ground connection via directly between the cap's ground pad and the EP pour. Avoid routing digital signals or switching converter traces under the LDO area to prevent noise injection into the analog 3.0 V rail.
Информация о соответствии
RoHS compliant per Microchip product page. Not AEC-Q100 qualified - this is the industrial-grade variant (-40 C to +85 C). Halogen-free status not explicitly stated in verified data.
