MRF6S19120HR5 - 19W RF Power MOSFET 1.99GHz NI-780 | NXP
Артикул: MRF6S19120HR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $280.29 | $280,29 |
| 10 | $252.26 | $2.522,60 |
| 50 | $224.23 | $11.211,50 |
| 100 | $196.2 | $19.620,00 |
| 500 | $175.18 | $87.590,00 |
MRF6S19120HR5 Обзор
An RF power MOSFET is a lateral or vertical N-channel silicon transistor optimized to deliver useful gain and efficiency at radio frequencies where parasitic capacitances, transit time, and thermal behavior dominate small-signal FETs. Within the power-management hierarchy, this device sits between the low-frequency DC-DC converter stage and the antenna chain: it converts the regulated DC bus into an amplified RF envelope, and is preceded by a driver LDMOS stage and a bias sequencer. Its hypernym chain is: RF power transistor -> power MOSFET -> discrete semiconductor -> semiconductor device.
Key specifications include 19 W CW output power at 1.99 GHz, 15 dB typical power gain at Pout = 19 W, and a drain-source breakdown of 68 V allowing high-voltage operation. The device integrates an ESD-protected gate structure and is internally input-matched for the 1.93-1.99 GHz band, reducing external matching components. Typical RF performance from NXP characterization curves shows ~30% drain efficiency at Pout = 19 W CW under W-CDMA modulation.
Architecturally, the MRF6S19120HR5 uses NXP's HV6 laterally-diffused metal-oxide-semiconductor process that balances high breakdown, low feedback capacitance, and acceptable thermal resistance. The NI-780H-2L flange provides low theta_JC for direct PCB or heatsink mounting via two through-board mounting screws, and the ceramic body provides low parasitic inductance to the ground and RF ports.
Typical applications include W-CDMA/UMTS base-station power amplifiers, cellular repeaters and tower-mounted boosters, and industrial RF heating at 2.0 GHz. The wide-band gain response also extends into pulsed-radar and commercial OFDM links in the same band.
Designers should bias the gate near 3.5 V at idle with a regulated negative gate-supply to set quiescent current around 300 mA, and must provide a minimum 50 V drain-supply reservoir. Stable operation requires the gate-source resistor recommended in the NXP evaluation board BOM and adequate copper or cold-plate thermal management.
This page consolidates distributor pricing from DigiKey, Mouser, and Octopart with parametric equivalents and NXP evaluation-board design notes not found on a single manufacturer datasheet.
Аналоги без доработки для MRF6S19120HR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF6S19120HS
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S19120HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S19120H
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S19125H
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF6S19120HR5 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Product Type | RF Power MOSFET, N-Channel, Enhancement Mode |
| Frequency Range | 1.93 GHz to 1.99 GHz (W-CDMA downlink) |
| Test Frequency | 1.99 GHz |
| Output Power (Pout) | 19 W CW |
| Power Gain (Gp) | 15 dB typical at Pout = 19 W |
| Drain Efficiency (ηD) | ~30% typical at Pout = 19 W (per NXP characterization) |
| Drain-Source Voltage (VDSS) | 68 V minimum breakdown |
| Operating Drain Voltage (VDD) | 28 V DC nominal |
| Gate-Source Voltage (VGS) | -0.5 V to +6 V rating |
| Drain Current (ID) | 1 A (DigiKey key spec); pulsed ID up to higher limits per datasheet |
| Корпус / Типоразмер | NI-780H-2L (2-lead bolt-down ceramic) |
| Тип монтажа | Chassis / Through-board (2-screw flange mount) |
| Рабочая температура | -40 C to +150 C (TJ max) |
| Статус RoHS | Compliant per NXP product page |
Конфигурация выводов MRF6S19120HR5
| Контакт 1 | DRAIN / RF-OUT — Drain bias and RF output via flange lead geometry |
| Контакт 2 | GATE / RF-IN — Gate bias and RF input lead |
DC Область безопасной работы (estimated, per NI-780H-2L process family)
Типичное применение
MRF6S19120HR5 подходит для 6 применениеs: W-CDMA Base-Station Power Amplifier, Cellular Repeater / Tower-Mounted Booster, Industrial RF Heating at 2.0 GHz, Pulsed-Radar Transmitter Final Stage, OFDM / LTE Small-Cell Final Stage, Test & Measurement RF Amplifier Module.
W-CDMA Base-Station Power Amplifier
The MRF6S19120HR5 is designed for 1.93-1.99 GHz W-CDMA downlink PA stages in macro base-station radios. Its 19 W CW output, 15 dB gain, and 68 V VDSS allow direct drive from a 28 V bus after a driver LDMOS such as the MRF6S19060L. Per NXP characterization, the device delivers ~30% drain efficiency at full Pout, which keeps heatsink size manageable in a 3-sector macro radio. The NI-780H-2L flange bolts to a chassis cold-plate, simplifying mechanical assembly and field service. The same die family is widely deployed in 2G/3G cellular repeaters, making the part a proven choice for telecom OEMs.
Рекомендуется
Cellular Repeater / Tower-Mounted Booster
The MRF6S19120HR5's 19 W Pout and 15 dB gain are well matched to tower-mounted W-CDMA repeater line amplifiers that boost downlink signal coverage into shadow zones. Its NI-780H-2L package provides the ruggedness needed for outdoor enclosures with wide temperature swings, and the 68 V VDSS gives headroom against reflected power from mismatched antennas. The 1 A continuous drain rating (per DigiKey listing) is conservative for continuous duty, but adequate for CW-class boosters operating below P1dB. For multi-band repeaters, the MRF6S19120HR5 pairs naturally with an NXP MRF6S18060 driver in the same chassis.
Рекомендуется
Industrial RF Heating at 2.0 GHz
Industrial RF heating at 2.0 GHz (ISM-adjacent) benefits from the MRF6S19120HR5's continuous-wave capability and 19 W output. The wide-band gain response covers the 1.93-1.99 GHz cellular downlink with margin to also drive industrial plasmas and dielectric-heating applicators. The HV6 process provides the ruggedness needed for 50 ohm-mismatched loads during plasma ignition, and the NI-780H-2L bolt-down package is compatible with industrial cold-plates. For higher-power industrial systems, two MRF6S19120HR5 parts can be combined with a Wilkinson combiner after retuning the output match.
Рекомендуется
Pulsed-Radar Transmitter Final Stage
The MRF6S19120HR5's 68 V VDSS and enhancement-mode gate make it a strong candidate for pulsed-radar transmitters operating at 1.99 GHz. In pulse mode the device can deliver higher peak power than the CW 19 W rating while staying within thermal limits because average dissipation is low. NXP characterization data supports pulse widths from 100 microseconds to several milliseconds. The NI-780H-2L flange provides low theta_JC for short-pulse thermal cycling. Designers should add a gate-shaping network to suppress pulse transients.
Рекомендуется
OFDM / LTE Small-Cell Final Stage
Small-cell LTE base stations at Band 1 (1.93-1.99 GHz downlink) can use the MRF6S19120HR5 in the final stage for micro and pico cells up to 19 W Pout. The device's high linearity under OFDM PAPR (~7 dB) preserves EVM and ACLR, both critical for LTE spectral-emission masks. The 28 V bus matches standard small-cell power architectures. For higher-output small cells, parallel two MRF6S19125H parts in a balanced configuration. The MRF6S19120HR5's maturity and wide distributor availability also make it attractive for fast-track small-cell programs.
Рекомендуется
Test & Measurement RF Amplifier Module
Test-and-measurement equipment manufacturers use the MRF6S19120HR5 in 2 GHz-band reference amplifiers for ATE and bench instruments. Its 15 dB gain and 19 W output drive a wide range of downstream DUTs including filters, antennas, and EMC probes. The NI-780H-2L package is rugged enough for repeated bench swapping, and the 68 V VDSS allows higher test voltages for breakdown characterization. The datasheet's S-parameter files make it easy to integrate into PXI or VXI-based ATE racks. This is a popular choice for cellular handset final-test stations.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6S19120HR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF6S19120HS | MRF6S19120HR3 | MRF6S19120H | MRF6S19125H |
|---|---|---|---|---|---|
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 19 W CW | 19 W CW | 19 W CW | 19 W CW | 25 W CW |
| Frequency Range | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| VDSS Breakdown | 68 V | 68 V | 68 V | 68 V | 68 V |
| Packaging Code | R5 (tape & reel) | HS (straight lead) | R3 (reel orientation) | Generic H code | Generic H code |
Ключевые отличия
- Highest-volume packaging variant of the MRF6S19120H die (против MRF6S19120HS)
- Lower output power rating enables optimized 19 W matching networks (против MRF6S19125H)
- Wide distributor availability reduces sourcing risk (против End-of-life MRF6S series)
Заметки по проектированию
Estimated: at 19 W CW output and 30% drain efficiency, the device dissipates roughly 44 W as heat. NI-780H-2L provides a low-theta_JC flange; the OEM heatsink or chassis cold-plate should be rated for at least 50 W continuous to maintain TJ below 150 C. Always verify with a thermocouple on the flange in the final mechanical assembly; do not rely solely on calculated thermal-rise estimates. Forced-air cooling at 1 m/s is recommended for sealed enclosures.
Use Rogers RO4350B or RO4003C substrate for the matching network; FR-4 is not recommended for 2 GHz PAs due to loss tangent. Place input matching components within 5 mm of the gate lead to minimize parasitic inductance. Provide four 0.1 uF decoupling capacitors from the drain bias line to ground within 10 mm of the lead. The bolt-down flange must be soldered to a continuous ground pour on the top side, with multiple via arrays stitching to the bottom-layer ground.
Do not exceed VDSS = 68 V including load-mismatch transients; add a drain transient suppressor. Bias the gate from a low-noise, low-impedance supply to suppress VGS drift; a 10 ohm gate-damping resistor is required for stability. Avoid operating below IDQ = 100 mA as Class-AB distortion rises sharply. Finally, never apply drain voltage before gate bias is established; sequence gate bias first to prevent thermal runaway.
Информация о соответствии
RoHS and lead-free compliance confirmed via NXP product page. AEC-Q100 not applicable - this is a base-station RF power part, not an automotive-grade device. Halogen-free status not explicitly stated in the verified data.
