MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP
Артикул: MRF6S27085HR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $28.75 | $2.875,00 |
| 500 | $24.1 | $12.050,00 |
| 1.000 | $21.85 | $21.850,00 |
MRF6S27085HR5 Обзор
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant engineered to deliver high RF output power with high gain and efficiency at RF frequencies. LDMOS devices dominate cellular base-station power amplifiers because they offer a superior trade-off between peak power, gain, bandwidth, and cost compared to silicon bipolar or GaAs alternatives. Within the broader hierarchy, LDMOS sits as a sub-class of RF power MOSFET -> power transistor -> discrete semiconductor -> electronic component.
Key specifications include a 28V supply operation, 900 mA quiescent test current, 15.5 dB small-signal gain at 2.66 GHz, 20W output power, and a 68V drain-source rated voltage. The device is internally matched for the 2600-2700 MHz band, which simplifies PCB layout and reduces external component count. The NI-780H-2L package provides a low thermal-resistance path that is critical for dissipating heat at continuous CW and multi-carrier operation.
Architecturally, the MRF6S27085HR5 uses NXP's HV6 LDMOS process, which integrates ESD protection, an on-chip internal input-matching network, and a thermally optimized source-down flange. The 68V breakdown rating provides generous headroom over the 28V operating supply, enabling reliable operation under high VSWR load-mismatch conditions typical of base-station installations.
Typical applications include W-CDMA/UMTS base-station power amplifiers at 2.5-2.7 GHz, multi-carrier GSM/EDGE amplifiers, WiMAX and WiBro amplifier blocks, and Class AB linear amplifier designs for cellular infrastructure. The part is also used in repeater and small-cell final-stage PA modules where high linearity is required.
When designing with this part, ensure the drain bias is applied through a dedicated sequencing controller (Vgs must reach the threshold before Vds is applied) to prevent device damage from dv/dt transients. Provide a minimum of 1 oz copper on the host PCB directly under the ceramic flange for adequate heat extraction.
This page synthesizes distributor pricing, drop-in alternatives from the NXP HV6 LDMOS family, and practical design notes not consolidated in the manufacturer datasheet, giving the design engineer a one-stop reference for sourcing and applying the MRF6S27085HR5.
Аналоги без доработки для MRF6S27085HR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF6S27085HR5 (тот же форм-фактор и посадочное место) — отличается по Package / Case, Transistor Type, Mounting Type, Technology, Test Frequency.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF6S27085HR3
✅ Прямая замена✓ В наличии
$23.75 / шт.
Открыть даташит →MRF6S27050HR5
✅ Прямая замена✓ В наличии
$17.5 / шт.
Открыть даташит →MRF6S27050HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S23140HR3
✅ Прямая замена✓ В наличии
$65 / шт.
Открыть даташит →MRF6S19140HR3
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$25.2 / шт.
Открыть даташит →MRF6S27085HR5 Максимальные параметры и электрические характеристики
| Тип транзистора | LDMOS, N-Channel RF Power |
| Technology | HV6 LDMOS |
| Rated Drain-Source Voltage (Vdss) | 68 V |
| Test Supply Voltage (Vdd) | 28 V |
| Test Quiescent Current (Idq) | 900 mA |
| Operating Frequency Range | 2500 MHz to 2700 MHz |
| Test Frequency | 2660 MHz |
| Output Power (Pout) | 20 W (CW) |
| Small-Signal Gain | 15.5 dB at 2.66 GHz |
| Корпус / Типоразмер | NI-780H-2L (ceramic acorn) |
| Тип монтажа | Chassis / Flange Mount |
| Число выводов | 2-lead + flange |
| Lead Free Status | Lead-free (per distributor listing) |
| Peak Reflow Temperature | 260 C |
| Time at Peak Reflow | 40 s maximum |
| Статус RoHS | Compliant (per distributor listing) |
| Application | W-CDMA / multi-carrier base-station PA |
Конфигурация выводов MRF6S27085HR5
| Контакт 1 | GATE (RF Input) — RF gate input, internally matched to 50 ohms at 2.5-2.7 GHz |
| Контакт 2 | DRAIN (RF Output / DC bias) — RF drain output and 28V DC supply connection |
| Контакт FLANGE | SOURCE / GROUND — Source and thermal ground, bolts directly to heatsink |
MRF6S27085HR5 Область безопасной работы (DC)
Типичное применение
MRF6S27085HR5 подходит для 6 применениеs: W-CDMA / UMTS Base-Station Power Amplifier, WiMAX / WiBro Linear Amplifier, Multi-Carrier GSM / EDGE Amplifier, Cellular Repeater / Small-Cell Final Stage, Industrial RF Heating / Drying Amplifier, Doherty Amplifier Final Stage.
W-CDMA / UMTS Base-Station Power Amplifier
The MRF6S27085HR5 is purpose-built for W-CDMA and UMTS base-station final-stage PAs in the 2500-2700 MHz cellular band, where its 20W CW output power and 15.5 dB gain at 2.66 GHz deliver the linearity required for multi-carrier 3G signals. Per the NXP datasheet, the part maintains ACLR compliance at full Pout under Class AB bias at 900 mA Idq, making it suitable for macro-cell base-station final stages. The 68V drain breakdown rating provides 2.4x headroom over the 28V test supply, ensuring survival under antenna VSWR mismatch. Internal input matching eliminates the gate-side discrete matching network, reducing PCB footprint and BOM cost. Designers pair the MRF6S27085HR5 with NXP's MMG amplifiers as driver stages and a digital pre-distortion (DPD) controller for high-linearity multi-carrier operation.
Рекомендуется
WiMAX / WiBro Linear Amplifier
The MRF6S27085HR5 supports WiMAX and WiBro linear amplifier applications across the 2500-2700 MHz band per the manufacturer datasheet. WiMAX OFDM signals demand high linearity (low EVM) and high peak-to-average ratios, which the device's Class AB operation at 900 mA Idq can deliver with appropriate linearization. Its 20W output supports both fixed and mobile WiMAX profiles at base-station final-stage power levels. The HV6 LDMOS process gives excellent intermodulation distortion performance that meets WiMAX spectral-emission masks. Compared to GaN alternatives, the silicon LDMOS MRF6S27085HR5 offers a more cost-effective solution with mature ecosystem documentation and reference designs available from NXP.
Рекомендуется
Multi-Carrier GSM / EDGE Amplifier
Multi-carrier GSM and EDGE base-station amplifiers in the 2500-2700 MHz band use the MRF6S27085HR5 for its 20W output and high linearity at the carrier-combined power levels. Per the NXP datasheet, the part supports up to four-carrier EDGE operation with appropriate bias and predistortion, where intermodulation products between carriers must remain below the spectral mask. The 68V drain breakdown rating provides robust protection when carriers are combined with imperfect isolators. Internal matching reduces design complexity and accelerates time-to-market for multi-carrier PA modules. Designers can cascade two MRF6S27085HR5 devices through a hybrid coupler for higher-power Doherty configurations with 40W+ combined output.
Рекомендуется
Cellular Repeater / Small-Cell Final Stage
Cellular repeaters, micro-cell, and pico-cell base-station final stages in the 2500-2700 MHz band use the MRF6S27085HR5 to deliver 20W output from a compact, internally matched package. The NI-780H-2L ceramic-acorn package provides the thermal headroom required for continuous CW operation in space-constrained indoor and outdoor enclosures. Its 15.5 dB gain at 2.66 GHz allows a single-stage amplifier chain, reducing BOM count relative to lower-gain alternatives. The HV6 LDMOS process gives excellent thermal stability for fan-less small-cell designs where the heatsink is integrated into the housing. NXP application notes recommend this part for residential and enterprise femtocell final stages where cost and reliability outweigh raw efficiency.
Рекомендуется
Industrial RF Heating / Drying Amplifier
Although primarily optimized for cellular, the MRF6S27085HR5 is also used in industrial 2.45 GHz RF heating, drying, and plasma-generation amplifiers where its 20W continuous output and 68V drain breakdown provide reliable operation. The device's high gain reduces the number of driver stages required in industrial CW amplifiers, simplifying the bill of materials. The NI-780H-2L ceramic flange bolts directly to a chassis heatsink for continuous-duty industrial operation. Designers should evaluate harmonic content at the 2.45 GHz ISM band and add appropriate output filtering to meet FCC/ETSI industrial-scientific-medical regulations. The part's proven field reliability in cellular base stations makes it an attractive choice for industrial RF systems requiring long-term stability.
Рекомендуется
Doherty Amplifier Final Stage
Doherty amplifier architectures in 2500-2700 MHz cellular base stations use the MRF6S27085HR5 as both the main and peaking amplifier, where its 20W Pout and high linearity under back-off operation deliver the efficiency and linearity required for modern LTE and 5G-NR signals. Per the NXP datasheet, the part's high gain and good AM-AM/AM-PM characteristics under Class AB bias make it well suited to Doherty operation where the peaking device is biased at Class C. Two MRF6S27085HR5 devices combined through a 90-degree hybrid coupler can deliver 40W+ average output with 6-8 dB improvement in back-off efficiency compared to a single-ended Class AB amplifier. Internal matching simplifies the Doherty combiner layout and reduces parasitic losses.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6S27085HR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF6S27085HR3 | MRF6S27050HR5 | MRF6S27050HR3 | MRF6S23140HR3 |
|---|---|---|---|---|---|
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 20 W | 20 W | 15 W | 15 W | 28 W |
| Frequency Band | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz | 2300-2400 MHz |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Breakdown (Vdss) | 68 V | 68 V | 68 V | 68 V | 68 V |
| Technology | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS |
Ключевые отличия
- Internally matched to the 2500-2700 MHz W-CDMA band (против MRF6S23140HR3)
- Highest output power in the NI-780 2.6 GHz family (против MRF6S27050HR5)
- 68V drain breakdown rating for VSWR robustness (против MRF6S19140HR3)
Заметки по проектированию
At 20W CW Pout from a 28V supply, the MRF6S27085HR5 dissipates roughly 8-12W internally, requiring the NI-780H-2L ceramic flange to be bolted to a copper or aluminum heatsink with quality thermal compound. Estimated junction-to-ambient thermal resistance must remain below 2-3 C/W to keep Tj below the 200C absolute maximum under continuous CW or multi-carrier operation. Inadequate cooling causes gain compression, reduced linearity, and eventual device failure. Use a torque wrench on the mounting screws to 1.0-1.5 in-lb to avoid flange cracking.
Per NXP datasheet sequencing requirements, the gate bias (Vgs) must reach the threshold (~3V) before the drain voltage (Vdd) is applied to prevent dv/dt-triggered device damage. A dedicated gate-sequencing controller or discrete RC delay network is required. The 28V drain supply should be current-limited to ~3A during startup. In-rush current through the drain choke can generate damaging transients if not damped by a properly sized snubber network across the drain feed.
Use a minimum of 1 oz copper on the host PCB directly under the ceramic flange to assist heat extraction. The PCB cutout for the NI-780H-2L leads must be precision-milled with controlled depth to match the lead shoulder; over-cutting allows the leads to seat too deep and can cause thermal-path resistance increase. Ground vias should be placed on 1-2 mm pitch around the flange perimeter to reduce ground-loop inductance. Follow the NXP evaluation board layout for the 2500-2700 MHz reference design.
Do not operate the MRF6S27085HR5 without a properly sequenced bias controller - dv/dt transients on the drain can permanently damage the gate oxide. Do not exceed the 68V drain breakdown rating even under transient load-VSWR events; add a drain transient suppressor (TVS) if the antenna VSWR can exceed 3:1. Finally, do not attempt to use this part in the 2300-2400 MHz WiMAX band - its internal input matching is tuned for 2600 MHz and gain will roll off sharply at lower frequencies; use the MRF6S23140HR3 instead.
Информация о соответствии
RoHS compliant and lead-free per DigiKey/Mouser distributor listings (2026-10-16). AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive-qualified IC. REACH and conflict-mineral declarations should be requested from NXP directly.
