MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MPN: MRF6S27050HR5 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $28.5 | $28.50 |
| 10 | $25.2 | $252.00 |
| 100 | $22.1 | $2,210.00 |
| 500 | $19.8 | $9,900.00 |
| 1,000 | $17.5 | $17,500.00 |
MRF6S27050HR5 Overview
An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET architecture designed to deliver high RF output power at high frequencies. LDMOS devices sit within the broader power MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and dominate base-station PA design because of their high breakdown voltage, high gain, and excellent thermal performance in ceramic air-cavity packages such as the NI-780 family.
Key features of the MRF6S27050HR5 include 68 V drain-source breakdown rating for high-voltage ruggedness, a 16 dB typical power gain that simplifies multi-stage PA line-ups, and excellent WCDMA linearity performance verified at 28 V / 500 mA bias. The device is internally input-matched, allowing easier PCB integration, and the NI-780H-2L package provides a screw-down flange for direct mounting to a heatsink or chassis ground plane, ensuring low thermal resistance under continuous-wave (CW) and pulsed RF drive.
Architecturally, the MRF6S27050HR5 uses NXP's sixth-generation HV6 LDMOS process, which improves intermodulation distortion and power-added efficiency relative to earlier MRF6 generations. Its drain is rated for 68 V transient, providing ruggedness against output mismatch and antenna load variation — a key requirement for base-station PAs exposed to VSWR events from disconnected or faulty feeders.
Typical applications include WCDMA/UMTS driver and final PA stages in the 2.5–2.7 GHz wireless bands, WiMAX and LTE small-cell power amplifiers, and other 2.62 GHz industrial RF amplifier designs. It is also used as a driver for higher-power final-stage LDMOS devices in Doherty and push-pull configurations.
When designing with this device, ensure the source leads are properly grounded with multiple low-inductance vias and that the NI-780H flange is firmly bolted to the heatsink. Bias sequencing (Vgs before Vds) and proper drain-side harmonic termination are essential for both linearity and long-term reliability.
This page synthesizes NXP datasheet specifications, distributor stock signals, and drop-in same-family and cross-family alternatives from the MRF6S series and competing RF LDMOS families — engineering context not consolidated in any single distributor listing.
Drop-in alternatives for MRF6S27050HR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6S27050HR5 (same form factor and footprint) — differing in Mounting Type, Transistor Type, Operating Frequency Range, Package / Case, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6S27050HSR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S27085HR5
✅ Drop-In✓ In Stock
$21.85 / Unit
View Datasheet →MRF6S27180HR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S27050NBR1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF6S21060NBR1
✅ Drop-In✓ In Stock
$21.4 / Unit
View Datasheet →MRF6S27050HR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Transistor Type | LDMOS, N-Channel, RF Power |
| Part Status | Obsolete |
| Frequency | 2.62 GHz (operating band) |
| Test Voltage (Vds) | 28 V |
| Test Current | 500 mA |
| Power Gain (Gps) | 16 dB (typical at 2.62 GHz) |
| Power Output | 7 W |
| Voltage - Rated (Vds max) | 68 V |
| Package / Case | NI-780H-2L |
| Supplier Device Package | NI-780 |
| Mounting Type | Chassis Mount / Screw Flange |
| MSL Level | Not applicable (non-surface-mount ceramic package) |
| Primary Application | WCDMA / UMTS base-station PA driver and final stage |
MRF6S27050HR5 Pin Configuration
| Pin 1 | DRAIN — RF output / DC drain supply (28 V typical) |
| Pin 2 | GATE — RF input / DC gate bias |
| Pin 3 | SOURCE / FLANGE — Source and ground (chassis-mount flange) |
MRF6S27050HR5 Safe Operating Area (DC)
Typical Applications
MRF6S27050HR5 is suitable for 7 applications: WCDMA Base-Station Driver PA, LTE Small-Cell / Micro-Cell PA, WiMAX 2.5 GHz Power Amplifier, Industrial 2.62 GHz RF Amplifier, Doherty PA Final Stage (Mid-Power), Driver for Higher-Power LDMOS Final Stage, RF Transmitter Final PA for Test & Measurement.
WCDMA Base-Station Driver PA
The MRF6S27050HR5 is well suited as a driver stage in WCDMA base-station power amplifiers operating in the 2.5–2.7 GHz UMTS band. Its 7 W output and 16 dB power gain at 28 V/500 mA provide the right drive level to feed a higher-power final LDMOS such as the MRF6S27180HR5 in a Doherty configuration. Because LDMOS produces no switching noise, it pairs cleanly with linearization predistortion algorithms used in 3G/4G macro cells, and the NI-780H-2L flange bolts directly to the PA chassis for low thermal resistance during continuous downlink traffic.
Recommended
LTE Small-Cell / Micro-Cell PA
For LTE small-cell base stations operating in Band 7 (2.5–2.69 GHz) or Band 38 (2.57–2.62 GHz), the MRF6S27050HR5 delivers 7 W of linear output suitable for picocell and micro-cell EIRP budgets. Its WCDMA-characterized linearity translates well to LTE signals when paired with digital predistortion (DPD), and its 16 dB gain simplifies the PA line-up by eliminating an intermediate stage. The NI-780H ceramic package provides the thermal headroom needed for continuous LTE downlink at typical small-cell duty cycles.
Recommended
WiMAX 2.5 GHz Power Amplifier
The 2.5–2.7 GHz operating range of the MRF6S27050HR5 overlaps with the 2.5 GHz WiMAX (IEEE 802.16e) band, making it a viable final-stage PA for fixed or nomadic WiMAX customer-premises equipment (CPE) and small base stations. The 7 W output delivers the EIRP needed for non-line-of-sight coverage, while 16 dB gain reduces bill-of-materials count. Designers should add harmonic filtering at the output to meet WiMAX spectral-emission mask requirements and use the NI-780 flange for chassis grounding.
Recommended
Industrial 2.62 GHz RF Amplifier
The MRF6S27050HR5 can be repurposed outside cellular for industrial RF amplifier designs in the 2.62 GHz scientific and medical (ISM-adjacent) band, including RF heating, plasma generation, and industrial drying equipment. Its 7 W continuous output, 68 V drain rating, and ruggedness against VSWR make it a robust choice for non-telecom environments where load mismatch is common. The ceramic flange allows direct mounting to process-chamber walls or industrial heatsinks for thermal management.
Recommended
Doherty PA Final Stage (Mid-Power)
When used as the main or peaking amplifier in a 2.62 GHz Doherty PA, the MRF6S27050HR5 provides 7 W peak output with the linearity headroom needed for load-modulated operation. Its 28 V bias and 500 mA quiescent current align with classic Doherty class-AB operating points, and the NI-780H-2L flange ensures thermal stability during the high peak-to-average ratios (PAR) typical of LTE and WCDMA signals. Designers typically pair it with a same-band peaking amplifier such as the MRF6S27085HR5.
Recommended
Driver for Higher-Power LDMOS Final Stage
When macro-cell base-station designs need more than 7 W, the MRF6S27050HR5 is an ideal driver for the 18 W MRF6S27180HR5 or the 85 W MRF6S27085HR5 in a multi-stage PA line-up. Its 16 dB gain drives the final-stage input to saturation while keeping the driver's own linearity contribution minimal. The same NI-780 package family across driver and final means the PCB layout can use identical source-grounding and bias-tee patterns for both stages.
Recommended
RF Transmitter Final PA for Test & Measurement
In laboratory and test-instrument RF signal chains that require a known 2.62 GHz / 7 W signal source (for example, EMC test amplifiers or wireless-protocol conformance rigs), the MRF6S27050HR5 provides a characterized, repeatable power amplifier with documented S-parameters. Its 68 V breakdown rating gives margin against load-pull mismatches when driving non-50-ohm test fixtures. The ceramic flange allows bolt-down mounting to the test-chassis heatsink, which simplifies integration into rack-mount instrumentation.
Recommended
Recommended Products Summary
Engineering reference data for MRF6S27050HR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6S27050HSR5 | MRF6S27085HR5 | MRF6S27180HR5 | MRF6S27050NBR1 | MRF6S21060NBR1 |
|---|---|---|---|---|---|---|
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780 family - similar |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2.62 GHz | 2.62 GHz | 2.62 GHz | 2.62 GHz | 2.62 GHz | 2.11 GHz |
| Output Power | 7 W | 7 W | 9 W | 18 W | 7 W | 60 W (typical) |
| Test Voltage (Vds) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Breakdown (Vds max) | 68 V | 68 V | 68 V | 68 V | 68 V | 68 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete (legacy) | Obsolete (legacy) | Obsolete | Obsolete |
Key Differentiators
- Direct tape-and-reel packing variant of same die (vs MRF6S27050HSR5)
- Higher output power in same package (vs MRF6S27085HR5)
- Much higher power for final-stage upgrades (vs MRF6S27180HR5)
- Same NXP MRF6S family silicon pedigree (vs MRF6S21060NBR1)
Design Notes
The NI-780H-2L flange must be bolted to a flat, thermally-conductive heatsink or chassis using the recommended torque and thermal interface material. Estimated: at 28 V drain bias, 500 mA quiescent current, and 7 W RF output, the part typically dissipates 7–10 W as heat (depending on PAE); without adequate heatsinking, junction temperature will exceed the rated maximum and cause catastrophic failure. Use multiple low-inductance source-grounding vias under the flange edge.
The PCB land pattern must match the NI-780H-2L package outline (drain, gate, and source/flange pads) with controlled-impedance (typically 50 Ω microstrip) feed lines for the input and output. Use RF-grade dielectric substrate (Rogers RO4003 or equivalent) for minimum insertion loss at 2.62 GHz. Solder the gate and drain leads with lead-free high-temperature solder; do NOT reflow-solder the ceramic flange — it is mechanically fastened with screws, not soldered.
Do not exceed the 68 V drain breakdown rating — ensure drain-supply transients (from load-pull or hot-switching events) are clamped below this value with a TVS or snubber. Bias sequencing is critical: gate bias (Vgs) MUST be applied BEFORE drain bias (Vds) to prevent thermal runaway and device destruction. Reverse sequencing is a common cause of LDMOS failure during PA turn-on. Add a gate-source resistor to ensure the device stays off during Vds-only power-up.
Keep the gate-bias traces physically separated from the drain-RF output traces to prevent positive feedback and instability. Place bypass capacitors (10 µF electrolytic + 100 nF + 10 nF ceramic) physically close to the drain lead, and use a quarter-wave stub or harmonic filter at the output to meet WCDMA/LTE spectral-emission masks. Source-lead grounding must use multiple parallel vias (typically 6–10) to minimize source-lead inductance, which directly degrades gain and efficiency at 2.62 GHz.
Because the MRF6S27050HR5 is characterized for 2.62 GHz WCDMA linearity, input and output matching networks must use 50 Ω reference and be tuned with the actual fixture — datasheet S-parameters are de-embedded and may shift by 0.5–1 dB in your PCB environment. Use a vector network analyzer to verify input matching and add a small ferrite bead on the drain-supply line to suppress low-frequency instability below 1 GHz.
Compliance Information
Compliance status not provided in the verified web data; RoHS/REACH for legacy Freescale/NXP RF LDMOS NI-780 parts should be verified against the NXP product page or contact NXP directly. AEC-Q100 is not applicable to RF power transistors. The part is reported as obsolete — last-time-buy rules may apply.
