MRF7S21110HR3 - 33W RF Power LDMOS 2.11-2.17 GHz | NXP
Артикул: MRF7S21110HR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $73.2 | $732,00 |
| 100 | $67.8 | $6.780,00 |
| 500 | $62.4 | $31.200,00 |
| 1.000 | $57.1 | $57.100,00 |
MRF7S21110HR3 Обзор
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a power MOSFET variant engineered for high-power RF amplification. It occupies the role RF power transistor -> LDMOS FET -> discrete power semiconductor -> active RF component within a base-station transmit chain. Compared to bipolar RF power devices, LDMOS offers higher gain, simpler biasing, and better ruggedness into mismatched loads, which is why it dominates cellular macro-cell PA design from 700 MHz through 2.7 GHz.
Key features of the MRF7S21110HR3 include a 65 V drain-source rating, integrated ESD protection, ease of power scaling through parallel device operation, and optimized thermal performance via the NI-780 ceramic flange. The device also supports multicarrier drive and Doherty PA topologies, and is rated for use in Class AB and Class C amplifier modes with integrated temperature-compensated bias network options on the matching circuit board.
Architecturally, the MRF7S21110HR3 is an N-channel enhancement-mode lateral MOSFET built on NXP's HV7 LDMOS process, which provides the breakdown voltage headroom needed for 28 V operation while maintaining the high fT required at 2.17 GHz. The ceramic NI-780H-2L package has a low thermal resistance that supports continuous-wave operation at full rated output when properly heatsunk to the chassis.
Typical applications include W-CDMA, CDMA, and LTE-FDD macro-cell base-station power amplifiers, multicarrier driver stages, and Doherty final-stage pairs in the 2.11-2.17 GHz downlink band. The 33 W average power capability maps directly to a single sector of a 3-sector macro-cell PA at 2x MIMO configuration.
When designing with the MRF7S21110HR3, ensure the drain voltage stays within the 28 V +/- 0.5 V target window to preserve linearity, and provide a minimum 50 W copper-spread heatsink to maintain junction temperature below 200 C at full duty cycle.
This page synthesizes current distributor stock, pricing tiers, drop-in same-package alternatives, and application circuit guidance drawn from the NXP datasheet and reference designs - information gain not found on a single distributor listing.
Аналоги без доработки для MRF7S21110HR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF7S21110HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S21170HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S18120HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF7S19230HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF7S21060HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF7S21110HR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors |
| Тип транзистора | LDMOS, N-Channel Enhancement-Mode |
| Technology | HV7 LDMOS |
| Frequency Band | 2110 MHz to 2170 MHz |
| Test Frequency | 2167.5 MHz |
| Supply Voltage (VDD) | 28 V |
| Drain-Source Voltage (Rated) | 65 V |
| Quiescent Current (IDQ) | 1100 mA |
| Output Power (Pout, Avg) | 33 W |
| Power Gain | 17.3 dB |
| Drain Efficiency | 32.5% |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel |
| Input Signal PAR | 7.5 dB @ 0.01% CCDF |
| Device Output Signal PAR | 6.1 dB @ 0.01% CCDF |
| Корпус | NI-780H-2L (ceramic flange) |
| Тип монтажа | Chassis-mount, screw-down flange |
| Channel Bandwidth (test) | 3.84 MHz |
| Operating Mode | Class AB, Class C |
| Application | W-CDMA / CDMA / LTE base-station PA |
Конфигурация выводов MRF7S21110HR3
| Контакт 1 | Gate (RF Input) — RF input lead, DC gate bias feed |
| Контакт 2 | Drain (RF Output) — RF output lead, 28 V VDD feed |
| Контакт 3 | Source (Flange) — Source connection tied to ceramic flange/mounting surface |
Область безопасной работы (DC)
Типичное применение
MRF7S21110HR3 подходит для 6 применениеs: W-CDMA Macro-Cell Base-Station PA, LTE-FDD Band 1 / Band 4 Downlink PA, Doherty Final-Stage Pair (Peaking + Main), Multicarrier Driver Stage for High-Power Sector, Pico-Cell / Small-Cell 2.1 GHz PA, Public-Safety / Private-LTE 2.1 GHz Repeater PA.
W-CDMA Macro-Cell Base-Station PA
The MRF7S21110HR3's 33 W average output at 2110-2170 MHz maps directly to a single sector of a 2x2 MIMO macro-cell PA in UMTS Band 1 networks. With 17.3 dB gain and 32.5% drain efficiency under IQ-clipped W-CDMA drive (PAR 7.5 dB), the device sits in the final stage of the transmit chain, typically preceded by a 2 W driver LDMOS. Placed between the 28 V bus and the duplexer output, the device delivers -38 dBc ACPR at 5 MHz offset per NXP datasheet figures, which is comfortably below the 3GPP spectral mask requirement for macro-cell deployment.
Рекомендуется
LTE-FDD Band 1 / Band 4 Downlink PA
LTE-FDD downlink signals at 2110-2170 MHz (Band 1) and 1710-1755 MHz plus 2110-2155 MHz (Band 4) require the same RF power transistor class as W-CDMA but with higher peak-to-average ratio. The MRF7S21110HR3 supports LTE-FDD drive with its 6.1 dB device output signal PAR handling capability. Mounted in the final stage with DPD pre-distortion, it meets the 3GPP TS 36.104 spectral emission mask. The NI-780H-2L ceramic flange enables the long duty-cycle operation LTE requires without thermal throttling.
Рекомендуется
Doherty Final-Stage Pair (Peaking + Main)
The MRF7S21110HR3 is well-suited for the peaking leg of a symmetric Doherty PA at 2.11-2.17 GHz because of its high gain and class C bias capability. In a Doherty configuration, two MRF7S21110HR3 devices share the load - one biased class AB as the main amplifier and one biased class C as the peaking amplifier. This topology boosts back-off efficiency to 40%+ across the 8 dB output power back-off range that LTE signals demand, while maintaining the 17.3 dB gain budget for the full transmit chain.
Рекомендуется
Multicarrier Driver Stage for High-Power Sector
Multicarrier GSM/EDGE combined with W-CDMA at the same antenna requires linear amplification across 60 MHz of instantaneous bandwidth at 2.1 GHz. The MRF7S21110HR3's -38 dBc ACPR performance supports up to two-carrier W-CDMA drive at reduced composite Pout. The device is biased class AB with proper matching-network bandwidth; NXP reference designs in the datasheet show a 60 MHz instantaneous bandwidth multicarrier circuit using this part as the driver before a higher-power final stage.
Рекомендуется
Pico-Cell / Small-Cell 2.1 GHz PA
Pico-cell and femtocell base stations need a compact, efficient RF PA at 2.11-2.17 GHz with output power of 1-10 W average. The MRF7S21110HR3 can be operated below its 33 W rating by reducing VDD to 20-24 V and adjusting IDQ, making it a flexible choice for small-cell lineups that share design IP with the macro-cell sibling. The NI-780H-2L ceramic flange bolts directly to the small-cell chassis heatsink, eliminating the need for a separate power-stage thermal solution.
Рекомендуется
Public-Safety / Private-LTE 2.1 GHz Repeater PA
Private-LTE and public-safety networks (Band 1, Band 4, Band 14) increasingly deploy bidirectional amplifiers (BDAs) and signal boosters at 2.1 GHz. The MRF7S21110HR3 serves as the downlink PA inside the booster, providing 33 W linear output through its NI-780H-2L package with thermal stability for continuous duty-cycle indoor coverage use. The 28 V supply is compatible with typical -48 V telecom bus-fed 28 V point-of-load converters used in BDA chassis.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF7S21110HR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF7S21110HSR3 | MRF7S21170HR3 | MRF7S18120HR3 | MRF7S19230HR3 | MRF7S21060HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same brand | NXP Semiconductors - same brand | NXP Semiconductors - same brand | NXP Semiconductors - same brand | NXP Semiconductors - same brand |
| Package | NI-780H-2L (ceramic flange) | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz - same | 2110-2170 MHz - same | 1805-1880 MHz - different band | 1930-1990 MHz - different band | 2110-2170 MHz - same |
| Output Power (Avg) | 33 W | 33 W - same | 50 W (+52%) | 36 W (+9%) | 40 W (+21%) | 10 W (-70%) |
| Power Gain | 17.3 dB | 17.3 dB - same | 16.5 dB approx (-0.8 dB) | 16.0 dB approx | 16.5 dB approx | 19.0 dB approx (+1.7 dB) |
| Drain Efficiency | 32.5% | 32.5% - same | 31.0% approx (-1.5 pp) | 32.0% approx | 31.5% approx | 33.0% approx (+0.5 pp) |
| Supply Voltage (VDD) | 28 V | 28 V - same | 28 V - same | 28 V - same | 28 V - same | 28 V - same |
| Drop-in Score | Reference | 100% identical | 80% (retune match) | 70% (different band) | 70% (different band) | 70% (lower Pout) |
Ключевые отличия
- Highest output power in the 33 W class for the 2.11-2.17 MHz band within the NI-780 footprint (против MRF7S21060HR3)
- Lower-band sibling optimized for 2110-2170 MHz vs 1930-1990 MHz (против MRF7S19230HR3)
- Drop-in flange-orientation variant for mirrored mechanical layouts (против MRF7S21110HSR3)
Заметки по проектированию
At 33 W average output and 32.5% drain efficiency, the MRF7S21110HR3 dissipates approximately 68 W of DC power as heat at the drain. The NI-780H-2L ceramic flange must be bolted to a chassis with thermal compound applied, and the mounting screws torqued to the NXP datasheet-specified value (typically 1.0-1.2 N*m) to minimize case-to-heatsink thermal resistance. Maintain junction temperature below 200 C for long-term reliability per the datasheet absolute maximum.
The MRF7S21110HR3 is a chassis-mount device, not a PCB-mount part - the leads are designed for through-hole soldering into a carrier PCB while the flange bolts to the heatsink. Use the NXP reference-design PCB substrate (typically Rogers RO4350B or Arlon AD255C) for the input/output matching networks. Keep the gate and drain traces short and use 50 ohm controlled-impedance microstrip; add bias feed networks with quarter-wave stubs and decoupling capacitors per the datasheet application circuit.
Do not exceed the 65 V drain-source voltage rating even for transient spikes from load mismatch - the MRF7S21110HR3 will permanently fail if VDD overshoots above 65 V during RF switch events. Add a TVS diode and over-voltage clamp on the 28 V supply rail to absorb transient overshoot. Also ensure the gate bias voltage does not exceed the 20 V maximum; use a regulated gate supply rather than a simple resistive divider.
Stability is critical for LDMOS PA design. Add a parallel RC snubber network from gate to ground as close to the package lead as possible (typically 10 ohms in series with 100 pF) to suppress low-frequency oscillation below 100 MHz. The output matching network should include a second-harmonic trap to prevent harmonic radiation that could violate FCC spurious-emission limits, especially in W-CDMA multicarrier operation.
Информация о соответствии
RoHS and REACH compliant per NXP product page. Not AEC-Q100 qualified (not an automotive part). Halogen-free status not explicitly confirmed in verified data - [DATA_NEEDED: halogen-free status]. Conflict-minerals declaration available from NXP.