MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
Артикул: MRF6S21100HR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $56.78 | $56,78 |
| 10 | $51.1 | $511,00 |
| 100 | $45.42 | $4.542,00 |
| 500 | $41.5 | $20.750,00 |
| 1.000 | $38.95 | $38.950,00 |
MRF6S21100HR3 Обзор
What is an RF Power LDMOS? An RF Power Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) transistor is a power MOSFET architecture optimized for high-frequency, high-power amplification. Within the broader taxonomy, an LDMOS is a type of power MOSFET -> discrete semiconductor -> RF power device. LDMOS devices dominate cellular base station power amplifiers because they combine high RF power density, reasonable gain at GHz frequencies, and relatively low cost per watt compared to GaN alternatives in sub-3 GHz bands.
Key features of the MRF6S21100HR3 include a 68 V drain-source voltage rating, 15.9 dB typical power gain at 2.14 GHz, and a rugged design rated for multi-carrier W-CDMA, TDMA, CDMA, and TD-SCDMA modulation formats. The device is 100% PAR tested for ACPR linearity, and the NI-780H-2L ceramic package provides a low thermal resistance path with bolt-down flange mounting for direct heatsink attachment.
The device uses NXP's HV6 (high-voltage sixth-generation) LDMOS process technology, which offers improved efficiency and thermal performance versus earlier generations. The lateral structure simplifies biasing and enables broadband matching across the 60 MHz-wide W-CDMA downlink band.
Typical applications include W-CDMA base station final-stage power amplifiers, multi-carrier cellular repeaters, TD-SCDMA infrastructure, and PCN/PCS/cellular radio driver stages. The part is also used in wireless local loop (WLL) and 2.14 GHz industrial RF links.
When designing with this device, ensure adequate RF decoupling on the drain and gate bias lines, and follow the reference design PCB layout for the NI-780H-2L flange. The exposed ceramic body must be mounted to a heatsink with proper thermal compound to keep the junction below the 200 C maximum rating.
This page synthesizes the NXP datasheet, current distributor pricing, drop-in package alternatives, and thermal/design considerations not found in the bare datasheet, providing an engineer-ready reference for W-CDMA power amplifier design.
Аналоги без доработки для MRF6S21100HR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF6S21100HR3 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Transistor Type, Configuration, Package / Case, Application.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF8S21100HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S21100HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S21100HR5
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF8S21100HSR3
✅ Прямая замена✓ В наличии
$65 / шт.
Открыть даташит →MRF6S21100HR3 Максимальные параметры и электрические характеристики
| Тип транзистора | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Configuration | Single |
| Frequency Band | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | 68 V |
| Test Supply Voltage (VDD) | 28 V |
| Quiescent Drain Current (IDQ) | 950 mA |
| Test Drain Current | 950 mA |
| Корпус | NI-780H-2L (ceramic flange) |
| Тип монтажа | Surface Mount / bolt-down flange |
| Maximum Power Dissipation (Abs) | 388 W |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | Dual |
Конфигурация выводов MRF6S21100HR3
| Контакт 1 | RF Input (Gate Lead) — Gate RF input lead; receives drive signal from previous stage |
| Контакт 2 | Flange Mount / Source / Thermal — Mounting flange serving as source (ground) and primary thermal path; bolt to heatsink with thermal compound |
| Контакт 3 | RF Output (Drain Lead) — Drain RF output lead; delivers amplified W-CDMA signal to antenna network |
DC Область безопасной работы
Типичное применение
MRF6S21100HR3 подходит для 6 применениеs: W-CDMA Base Station Power Amplifier Final Stage, Multi-Carrier Cellular Repeater, TD-SCDMA Base Station Amplifier, PCS/Cellular Radio Driver Stage, Wireless Local Loop (WLL) Base Station, Industrial 2.14 GHz RF Link.
W-CDMA Base Station Power Amplifier Final Stage
The MRF6S21100HR3 is purpose-built for the 2110-2170 MHz W-CDMA downlink band, delivering 23 W average output power with 15.9 dB gain from a 28 V supply at 950 mA quiescent current. Its HV6 LDMOS process provides the linearity needed for 3GPP ACLR compliance with adequate DPD headroom, and the 68 V VDS rating ensures ruggedness under VSWR mismatches typical of tower-top installations. In a macro-cell final-stage PA, the MRF6S21100HR3 is paired with a smaller NXP driver LDMOS and preceded by a 90-degree hybrid combiner for multi-carrier operation across the full UMTS Band I spectrum.
Рекомендуется
Multi-Carrier Cellular Repeater
Multi-carrier repeaters amplify combined W-CDMA carriers across the full 2110-2170 MHz downlink band, requiring devices with adequate intermodulation headroom and broadband flat gain. The MRF6S21100HR3's 15.9 dB gain and ACPR-tested linearity make it well-suited for repeater output stages where multiple carriers are amplified simultaneously. According to the NXP datasheet, the part is rated for TDMA, CDMA, and W-CDMA multi-carrier operation. The NI-780H-2L flange package simplifies thermal integration into sealed outdoor repeater enclosures.
Рекомендуется
TD-SCDMA Base Station Amplifier
TD-SCDMA networks operate in the 2010-2025 MHz band (adjacent to W-CDMA downlink) using the same Class AB LDMOS architecture. The MRF6S21100HR3 can be retuned with matching network adjustments to cover this band while benefiting from identical bias conditions (28 V, 950 mA IDQ). The HV6 process provides the linearity required for TD-SCDMA's high PAR uplink signals. According to the NXP datasheet, the device is explicitly characterized for TD-SCDMA base station applications.
Рекомендуется
PCS/Cellular Radio Driver Stage
At 23 W average, the MRF6S21100HR3 sits in the power range typical of driver stages for higher-power final amplifiers in PCN/PCS/cellular radio infrastructure. Its 15.9 dB gain per stage reduces overall PA line-up complexity. The 28 V bias point matches NXP's broader HV6 family ecosystem, simplifying spare-parts management across multi-stage amplifier modules. According to the NXP datasheet, the part is intended for Class AB operation in PCN/PCS/cellular radio applications.
Рекомендуется
Wireless Local Loop (WLL) Base Station
WLL systems deliver fixed-wireless telephony in the 2110-2170 MHz band, requiring rugged, line-powered RF power devices for outdoor cabinet installations. The MRF6S21100HR3's bolt-down NI-780H-2L flange package provides excellent thermal performance for sealed outdoor enclosures, and the 68 V VDS rating tolerates DC feed voltage variations on long cable runs. According to the NXP datasheet, the part is rated for WLL base station applications.
Рекомендуется
Industrial 2.14 GHz RF Link
Industrial RF links at 2.14 GHz use the MRF6S21100HR3 as a continuous-duty CW amplifier for telemetry and remote-sensor networks. The 23 W CW capability supports long-range point-to-point links with appropriate filtering. The device's broadband gain across the 2110-2170 MHz range accommodates frequency-agile industrial protocols. According to the NXP datasheet, the part is suitable for general 2.14 GHz industrial RF amplifier applications requiring high reliability.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6S21100HR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8S21100HR3 | MRF6S21100HSR3 | MRF6S21100HR5 | MRF8S21100HSR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L (variant) - same family | NI-780H-2L - same | NI-780H-2L - same |
| Process Generation | HV6 LDMOS | HV8 LDMOS (newer) | HV6 LDMOS | HV6 LDMOS | HV8 LDMOS |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz - same | 2110-2170 MHz - same | 2110-2170 MHz - same | 2110-2170 MHz - same |
| Output Power (Average) | 23 W | 100 W CW (~23 W avg W-CDMA) | 23 W | 23 W | 100 W CW |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Mounting Orientation | Standard flange | Standard flange - same | Reversed flange | Standard flange | Reversed flange |
Ключевые отличия
- Mature HV6 generation with proven field reliability (против MRF8S21100HR3)
- 23 W average output in standard flange orientation (против MRF6S21100HSR3)
- Explicit multi-standard support (W-CDMA, TDMA, CDMA, TD-SCDMA) (против MRF8S21100HR3)
Заметки по проектированию
Estimated: At 28 V supply and 950 mA quiescent current, the MRF6S21100HR3 dissipates approximately 26.6 W as DC bias (28 V x 0.95 A), plus additional RF losses in the drain match. With junction-to-case thermal resistance around 0.45 C/W (per NI-780H-2L family typical values), the junction rises about 12 C above the flange. The flange must be bolted to a heatsink capable of keeping it below 100 C; thermal compound such as Dow Corning SC-102 is mandatory. Without proper heatsinking, the device will thermal-shutdown or degrade.
Follow the NXP reference design PCB layout for the NI-780H-2L flange. Use a low-loss substrate such as Rogers RO4003C or RO4350B with thickness 20-32 mil for the input/output matching networks. The gate and drain leads must be bonded with short gold ribbons (typically 1 mm wide x 0.05 mm thick) directly to 50-ohm microstrip lines. Keep the DC bias feedlines decoupled with broadband chip capacitors (10 nF, 100 pF) placed within 2 mm of the gate/drain leads.
Do not operate the MRF6S21100HR3 without proper RF input drive - the device can experience parametric oscillation if the gate is left floating. Always ensure the gate bias is applied BEFORE the drain bias (sequencing requirement). Do not exceed VDS of 68 V under any transient condition - lightning surges at the antenna can induce DC spikes requiring external drain transient suppressors. Avoid operating into an open or shorted load without a circulator/isolator; the device is rated for 10:1 VSWR but only at reduced duty cycle.
The NI-780H-2L package flange MUST be properly grounded to the PCB ground plane with multiple vias around the mounting holes. The two RF leads (gate and drain) should exit the package in opposite directions to maximize isolation (>30 dB) between input and output. Use a continuous ground plane on the backside of the PCB with via stitching every lambda/20 of the operating frequency (approximately 3 mm at 2.14 GHz) to suppress parallel-plate modes.
For W-CDMA applications, the MRF6S21100HR3 requires careful attention to ACLR (Adjacent Channel Leakage Ratio) performance. According to the NXP datasheet, the device is 100% PAR-tested for ACPR but the system-level ACLR depends heavily on the linearity of the input drive signal. Apply digital pre-distortion (DPD) at the system level to maintain ACLR better than -50 dBc at the antenna. Use a vector signal generator and spectrum analyzer with W-CDMA test models (Test Model 1, 16 DPCH) to verify ACLR in production test.
Информация о соответствии
RoHS/REACH/lead-free status not explicitly stated in retrieved verified web data for MRF6S21100HR3; refer to NXP product page or contact NXP for current compliance documentation. AEC-Q100 is not applicable - this is a discrete RF power transistor, not an automotive-qualified IC.