MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP
Артикул: MRF8S19260HR6 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118 | $11.800,00 |
| 500 | $105.75 | $52.875,00 |
| 1.000 | $96.4 | $96.400,00 |
MRF8S19260HR6 Обзор
An RF power transistor (LDMOS) is a specialized power MOSFET laterally diffused on a silicon substrate, designed to amplify high-frequency RF signals with high efficiency and ruggedness. Within the hierarchy: RF transistor -> power transistor -> MOSFET -> discrete semiconductor, LDMOS has become the dominant technology for base-station power amplifiers below 3 GHz due to its high gain, good linearity, and cost efficiency compared to GaAs and Si bipolar alternatives. The MRF8S19260HR6 is one example in NXP's Airfast family of laterally-diffused RF power devices.
Key features include 18.2 dB typical power gain at 1960 MHz, 65 V drain-source voltage rating (V(BR)DSS), operation in Class AB or Class C for all major cellular modulation formats, integrated ESD protection, and a thermally optimized NI-1230-8 ceramic package. The ceramic bolt-down flange provides low thermal resistance for liquid-cooled or forced-air base-station designs.
The MRF8S19260HR6 is designed around W-CDMA and multi-carrier drive profiles, supporting both symmetric and asymmetric carrier aggregation across the 1930-1990 MHz band. Its lateral MOSFET structure delivers superior linearity versus earlier-generation bipolar devices, simplifying DPD (digital pre-distortion) correction in Doherty amplifier topologies.
Typical applications include W-CDMA/CDMA base-station final-stage PAs, multi-carrier GSM/EDGE amplifiers, and Doherty PA modules for the PCS/AWS uplink band. It is also used in repeater and small-cell infrastructure where high gain and rugged CW survivability are required.
Design considerations require adequate heat-sinking via the NI-1230-8 bolt-down flange, proper via-fenced microstrip input/output matching networks on the recommended PCB substrate, and a regulated 30 V gate-bias supply sequenced after the drain supply. Always consult the NXP MRF8S19260H datasheet for S-parameter files and application notes before final layout.
This page synthesizes distributor pricing, same-package drop-in alternatives, and practical PA design notes that go beyond the manufacturer datasheet presentation.
Аналоги без доработки для MRF8S19260HR6 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF8S19260HR6 (тот же форм-фактор и посадочное место) — отличается по Transistor Type, Application, Lead Free Status, Manufacturer, Mounting Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF8S19260HSR6
✅ Прямая замена✓ В наличии
$124 / шт.
Открыть даташит →MRF7S19120NR1
✅ Прямая замена✓ В наличии
$73 / шт.
Открыть даташит →MRF8S19260HR6 Максимальные параметры и электрические характеристики
| Тип транзистора | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) |
| Frequency Range | 1930 MHz to 1990 MHz |
| Test Frequency | 1.96 GHz (1960 MHz) |
| Drain-Source Voltage (V(BR)DSS) Rated | 65 V |
| Operating Drain Voltage (Test) | 30 V |
| Test Bias Current | 1.6 A |
| Average Output Power (Pout) | 74 W |
| Power Gain (Gp) | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A |
| Application Class | Class AB or Class C |
| Modulation Support | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE |
| Корпус | NI-1230-8 (ceramic bolt-down, 2-lead flange) |
| Тип монтажа | Chassis / heatsink mount (bolt-down flange) |
| Lead-Free Status | Yes |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
Конфигурация выводов MRF8S19260HR6
| Контакт 1 | GATE — RF input / gate bias terminal |
| Контакт 2 | DRAIN — RF output / drain bias terminal (also flange ground) |
| Контакт FLANGE | FLANGE / SOURCE — Source connection and thermal mounting surface (bolt-down chassis ground) |
Область безопасной работы - MRF8S19260HR6
Типичное применение
MRF8S19260HR6 подходит для 6 применениеs: W-CDMA / CDMA Base-Station Final-Stage PA, Multi-Carrier GSM/EDGE Power Amplifier Module, Doherty PA for LTE / 4G Base Station, Repeater and Small-Cell Infrastructure Amplifier, Aerospace and Defense RF Amplifier Subsystem, Industrial RF Heating and Plasma Generator Drive.
W-CDMA / CDMA Base-Station Final-Stage PA
The MRF8S19260HR6 is the final-stage power amplifier device for W-CDMA and CDMA macro base stations in the 1930-1990 MHz PCS/AWS uplink band. Its 74 W average output capability at 30 V with 18.2 dB gain directly drives the antenna combiner network in 3-sector cell-site PA assemblies. The LDMOS technology handles the high peak-to-average ratio (~6-8 dB) of W-CDMA waveforms without excessive back-off, while the NI-1230-8 bolt-down ceramic package provides the thermal headroom needed for continuous CW-rated operation. For Doherty amplifier configurations the high gain reduces driver-stage count, shrinking overall PA-module BOM cost.
Рекомендуется
Multi-Carrier GSM/EDGE Power Amplifier Module
In multi-carrier GSM/EDGE amplifier modules, the MRF8S19260HR6's 74 W average output capacity supports two or three simultaneous GSM carriers at full power. Its 18.2 dB gain and Class AB bias capability preserve GMSK linearity while handling the bursty envelope of EDGE (8-PSK) traffic. The NI-1230-8 package's bolt-down flange simplifies thermal integration into module chassis with forced-air cooling. Designers pair the device with a DPD (digital pre-distortion) feedback path to meet ACLR (adjacent channel leakage ratio) specifications for multi-carrier operation.
Рекомендуется
Doherty PA for LTE / 4G Base Station
The MRF8S19260HR6 is commonly deployed as the peaking or main device in Doherty power amplifier configurations for 4G LTE base stations in the PCS/AWS band. Its 74 W average power rating and high gain (18.2 dB) make it well-suited for the Doherty architecture's load-modulated operation, where the peaking device handles high-power peaks while the main device provides back-off efficiency. The lateral MOSFET structure exhibits the predictable AM-AM and AM-PM characteristics required for accurate digital pre-distortion correction. Mounted in the NI-1230-8 bolt-down ceramic package, the device integrates cleanly with the Doherty combiner's microstrip layout.
Рекомендуется
Repeater and Small-Cell Infrastructure Amplifier
The MRF8S19260HR6 supports RF repeater and small-cell base-station amplifier designs where high gain (18.2 dB) and 74 W output capability compensate for cable losses and extend coverage in dense urban or indoor deployments. Its 1930-1990 MHz band coverage aligns with standard PCS/AWS small-cell architectures, and the LDMOS technology's ruggedness tolerates load VSWR mismatches from imperfect antenna isolation. The bolt-down NI-1230-8 ceramic package allows compact PCB-to-chassis thermal integration in space-constrained small-cell enclosures.
Рекомендуется
Aerospace and Defense RF Amplifier Subsystem
Defense RF power subsystems in the 1930-1990 MHz band (including some tactical datalink and EW applications) use the MRF8S19260HR6 for its combination of high CW survivability, 18.2 dB gain, and 74 W output power. The NXP/Freescale legacy pedigree of this part makes it attractive for defense programs where mature, long-lifecycle RF power technology is preferred over the latest consumer-grade GaN parts. The NI-1230-8 ceramic bolt-down package is well suited to the ruggedized chassis-mount requirements typical of military RF amplifier assemblies.
Рекомендуется
Industrial RF Heating and Plasma Generator Drive
In industrial RF heating, plasma generation, and dielectric drying systems operating at 1.96 GHz, the MRF8S19260HR6's 74 W CW-class output capability and high gain deliver efficient microwave power delivery into non-resonant loads. The lateral MOSFET technology handles the load-mismatch stress common in industrial RF generators, while the bolt-down ceramic package simplifies coupling into waveguide or coaxial applicator structures. Engineers favor mature LDMOS parts like MRF8S19260HR6 over GaN for industrial RF applications where long-term supply stability outweighs the efficiency advantage.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF8S19260HR6 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8S19260HSR6 | MRF7S19120NR1 |
|---|---|---|---|
| Package | NI-1230-8 (ceramic bolt-down) | NI-1230-8 (ceramic bolt-down) - same | NI-780-4 (ceramic bolt-down) - same package family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Output Power (Average) | 74 W | 74 W | ~20 W |
| Drain-Source Voltage Rated (V(BR)DSS) | 65 V | 65 V | 65 V |
| Operating Drain Voltage (Test) | 30 V | 30 V | 28 V |
| Technology | LDMOS | LDMOS | LDMOS |
Ключевые отличия
- Highest power option in NI-1230-8 family at 1.93-1.99 GHz (против MRF7S19120NR1)
- Identical specifications with secondary sourcing via sister variant (против MRF8S19260HSR6)
- Mature LDMOS technology for sub-3 GHz macro base stations (против Generic GaN alternative)
Заметки по проектированию
Estimated: at 74 W average output power and 30 V drain supply with ~40% overall efficiency, roughly 110 W DC input is delivered to the device, with ~35-45 W dissipated as heat through the NI-1230-8 bolt-down ceramic flange. A forced-air finned heatsink rated for the specific junction-to-ambient thermal resistance budget is mandatory; liquid cold-plates are used in outdoor remote-radio-head deployments. Apply a thin, even layer of high-quality thermal interface material (TIM) between the ceramic package and heatsink to minimize contact resistance.
Use the reference design layout from the NXP MRF8S19260H datasheet as the starting point. Place input and output matching networks on the recommended low-loss PCB substrate (typically Rogers RO4350B or Arlon AD255C) with via-fenced 50-ohm microstrip lines. Keep gate and drain bias feedlines separated by at least one ground via row to prevent feedback oscillation. The bolt-down flange must be electrically bonded to the PCB ground plane with a continuous row of ground vias to control source inductance.
Gate bias must be sequenced ON after the drain supply ramps up, and OFF before the drain supply ramps down, to prevent thermal runaway and device damage. Use a regulated, low-noise gate bias supply (typically -2 to +3 V adjustable) with current limiting set to ~20% above the quiescent current. Include drain over-voltage protection with a TVS diode or active crowbar to protect the 65 V V(BR)DSS rating from load-mismatch transients. Place 100 nF and 10 uF decoupling capacitors close to the drain bias feedline.
Add a 5-10 dB pad attenuator at the device input when prototyping to protect against premature RF drive that can exceed the safe input power rating. Monitor the gate current during turn-on to detect oscillations; an unstable gate current often indicates parametric oscillation that must be resolved with input matching tweaks or ferrite isolators. Verify with a vector network analyzer that the small-signal S-parameters are stable (|Gamma_in| < 1 and |Gamma_out| < 1) across the operating band before applying full RF drive.
Do not exceed 65 V drain voltage even during transients - the MRF8S19260HR6's V(BR)DSS rating is absolute, and avalanche operation destroys the device permanently. Do not operate without adequate heatsinking; the bolt-down flange MUST be in firm, even contact with a thermal surface. Do not skip the input matching network optimization per the reference design; a poorly matched input reduces gain, efficiency, and may trigger parametric oscillation. Always include a circulator or isolator at the output to protect against antenna disconnection transients.
Информация о соответствии
Lead-free terminal finish confirmed via distributor listing; full RoHS/REACH compliance should be verified directly from NXP's latest material declaration. The MRF8S19260HR6 is not AEC-Q100 qualified (it is an RF power transistor, not an automotive logic IC). The original Freescale part predates some RoHS recasts, so non-RoHS legacy variants may also exist for defense programs - confirm the exact ordering code before RoHS-critical builds.
