MRF8S19260HR6 vs MRF8S19260HSR6 Сравнение

Подробное сравнение бок о бок MRF8S19260HR6 от NXP Semiconductors и MRF8S19260HSR6 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Активен
NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Активен

Сравнение характеристик

Параметр MRF8S19260HR6 MRF8S19260HSR6
Бренд NXP Semiconductors NXP Semiconductors
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $96,40 $124,00
Тип транзистора LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel, Dual
Technology Laterally Diffused Metal-Oxide Semiconductor (LDMOS) —
Frequency Range 1930 MHz to 1990 MHz —
Test Frequency 1.96 GHz (1960 MHz) 1.99 GHz
Drain-Source Voltage (V(BR)DSS) Rated 65 V —
Operating Drain Voltage (Test) 30 V —
Test Bias Current 1.6 A —
Average Output Power (Pout) 74 W —
Power Gain (Gp) 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A —
Drain Efficiency [DATA_NEEDED: typical % at rated conditions] —
Application Class Class AB or Class C —
Modulation Support CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE —
Корпус NI-1230-8 (ceramic bolt-down, 2-lead flange) —
Тип монтажа Chassis / heatsink mount (bolt-down flange) Chassis / Flange Mount (through-hole RF bolt-down)
Lead-Free Status Yes —
Статус RoHS [DATA_NEEDED: confirm from NXP product page] Compliant
Manufacturer Freescale Semiconductor (now NXP Semiconductors) NXP Semiconductors (formerly Freescale)
Part Number — MRF8S19260HSR6
Frequency Band — 1930 MHz to 1990 MHz
Drain-Source Voltage (Max Rated) — 65 V
Operating Drain Voltage (Typical) — 30 V
Continuous Drain Current (Test) — 1.6 A
Output Power (CW / Avg) — 74 W average
Power Gain — 18.2 dB at 1.99 GHz
Корпус / Типоразмер — NI-1230S-8 (ceramic air-cavity bolt-down)
Lead Free Status — Compliant (per DigiKey listing)
Operating Mode — Class AB and Class C capable
Application — W-CDMA, CDMA, multi-carrier cellular base station PA

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