MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
Артикул: MRF8S9220HSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $119.75 | $11.975,00 |
| 500 | $108.2 | $54.100,00 |
| 1.000 | $96.8 | $96.800,00 |
MRF8S9220HSR3 Обзор
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power transistor technology optimized for high-frequency, high-power RF amplification. LDMOS transistors sit within the broader MOSFET family and the power management hierarchy of RF front-end components. Compared to bipolar junction transistors (BJTs), LDMOS provides higher gain, better efficiency, and superior thermal stability, making it the dominant technology in cellular base station power amplifiers from 700 MHz through 2.7 GHz. The MRF8S9220HSR3 is part of NXP's HV8 family of 50 V-rated lateral RF MOSFETs.
Key features include typical 19.4 dB power gain at 960 MHz, single-carrier W-CDMA operation at 28 V VDD, integrated ESD protection, and Ni-pad gold-free metallization for high-volume assembly. Characterized with series-equivalent large-signal impedance parameters, the device supports both Class AB and Class C bias configurations across common cellular modulation formats including CDMA2000, W-CDMA, and LTE.
Designers can use this part in Doherty, Class AB push-pull, or single-ended final-stage topologies. The 70 V maximum drain-source rating provides substantial avalanche headroom over the 28 V nominal operating voltage, supporting robust SWR mismatch tolerance. Series-equivalent output impedance data is published to streamline matching network synthesis on FR-4 or ceramic substrates.
Typical applications include 900 MHz GSM/EDGE base station PAs, LTE band 8 final-stage amplifiers, RFID reader transmitters, industrial RF heating, and ISM-band solid-state power sources. The wide frequency coverage also supports amateur radio amplifiers in the 902-928 MHz ISM segment.
When designing with this part, bias the gate at approximately 2.8 V quiescent for Class AB and ensure the thermal interface uses a clamped or soldered heatsink. Designers should also confirm adequate drain-side decoupling (10 uF + 1 nF) close to the package tab to suppress VDD ringing under W-CDMA envelope peaks.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including same-brand part-number variants and cross-reference data sourced from public distributor cross-reference tools.
Аналоги без доработки для MRF8S9220HSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF8S9220HSR3 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Manufacturer, Package, Technology, Transistor Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
Для этого товара нет аналогов без доработки.
Запросить аналогиMRF8S9220HSR3 Максимальные параметры и электрические характеристики
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | 65 W |
| Operating Drain Voltage (VDD) | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | 70 V |
| Power Gain (typ) | 19.4 dB |
| Test Drain Current | 1.6 A |
| Корпус / Типоразмер | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | Single-ended, 1-carrier W-CDMA |
| Рабочая температура перехода | -65 C to +225 C |
| Тип монтажа | Surface Mount / Flange Mount |
| Lead-Free / RoHS | Lead Free (per DigChip listing) |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) |
Конфигурация выводов MRF8S9220HSR3
| Контакт 1 | DRAIN — RF output / DC drain supply (case flange) |
| Контакт 2 | GATE — RF input / DC gate bias |
| Контакт 3 | SOURCE — DC and RF ground (case flange bottom) |
DC Область безопасной работы (MRF8S9220HSR3)
Типичное применение
MRF8S9220HSR3 подходит для 6 применениеs: 900 MHz Cellular Base Station Power Amplifier Final Stage, LTE Band 8 (900 MHz) Macro-Cell PA, Industrial RF Heating / Drying Equipment, RFID Reader / UHF Gen2 Transmitter, Amateur Radio 900 MHz Linear Amplifier, Public Safety / Land Mobile Radio Repeater.
900 MHz Cellular Base Station Power Amplifier Final Stage
The MRF8S9220HSR3 delivers 65 W average W-CDMA output at 920-960 MHz per the NXP datasheet MRF8S9220H, fitting macro-cell base station final stages that target LTE band 8, CDMA2000, and W-CDMA simultaneously. Its 19.4 dB typical gain eliminates a separate driver stage, simplifying the RF chain. Used in a single-ended Class AB PA with published series-equivalent output impedance, it provides 30-35% drain efficiency at full output. The 70 V VDS rating gives substantial mismatch tolerance for antenna VSWR events typical in field-deployed cellular sites.
Рекомендуется
LTE Band 8 (900 MHz) Macro-Cell PA
The MRF8S9220HSR3's 65 W average output and 920-960 MHz coverage make it a direct fit for LTE band 8 macro-cell base station final stages per the NXP datasheet MRF8S9220H. The 100% PAR-tested rating guarantees linear output under LTE envelope statistics (about 7-9 dB peak-to-average ratio). Placed between the DPD pre-distortion block and the duplexer, it provides the RF power envelope needed for 4x4 MIMO antenna arrays at the sector. Compared to smaller LDMOS, it eliminates driver stage thermal overhead and improves overall system efficiency.
Рекомендуется
Industrial RF Heating / Drying Equipment
The MRF8S9220HSR3's 920-960 MHz operating frequency and 65 W continuous CW capability are useful for industrial RF heating applications operating in the 902-928 MHz ISM band per the NXP datasheet MRF8S9220H. Its 70 V VDS rating tolerates the high VSWR presented by unmatched wet loads, while its LDMOS thermal characteristics support continuous-duty operation with proper heatsinking. Used in Class C bias for maximum efficiency, it can drive RF applicators for wood drying, plastic welding, and textile heat-sealing with reliable duty cycles above 80%.
Рекомендуется
RFID Reader / UHF Gen2 Transmitter
The MRF8S9220HSR3 fits high-power UHF RFID reader transmitters operating in the 902-928 MHz ISM band per the NXP datasheet MRF8S9220H, providing 65 W peak output for long-range interrogation of passive tags at distances up to 10 m. Its fast switching and high gain enable OOK or PR-ASK modulation required by EPC Gen2 protocol. Used in a single-ended PA with circulator protection, it supports dense-reader mode with regulatory compliance under FCC part 15.247. The 70 V VDS provides robust tolerance to antenna reflections from nearby tag populations.
Рекомендуется
Amateur Radio 900 MHz Linear Amplifier
The MRF8S9220HSR3 is used in amateur radio linear amplifiers for the 902-928 MHz amateur band per the NXP datasheet MRF8S9220H, providing 65 W PEP output for SSB and CW modes. Its 19.4 dB gain and Class AB linearity make it suitable for low-distortion amplification of weak DX signals. With appropriate input matching and harmonic filtering, it can be integrated into compact PA modules for 33 cm band operation. The NI-780S package is well-suited for screw-down assembly in custom heatsink enclosures typical of ham radio construction.
Рекомендуется
Public Safety / Land Mobile Radio Repeater
The MRF8S9220HSR3's 920-960 MHz band coverage and 65 W average power fit land mobile radio repeaters and public safety infrastructure operating in the 900 MHz LMR bands per the NXP datasheet MRF8S9220H. Its 100% PAR-tested rating supports continuous-duty FM and P25 modulation without thermal derating. Used in a single-ended PA with circulator and harmonic filter, it provides the high reliability required by mission-critical public safety networks. The LDMOS ruggedness ensures years of continuous service in unattended mountain-top repeater sites.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF8S9220HSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8S9220HR3 | MRF8S9170NR3 | MRF8S7170NR3 | MRF8P9040NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (Case 465-06) | NI-780S (Case 465-06) - same | NI-780 - same family | NI-780 - same family | NI-780 - same family |
| Frequency Range | 920-960 MHz | 920-960 MHz - same | 920-960 MHz - same | 728-768 MHz | 920-960 MHz - same |
| Output Power (Avg, W-CDMA) | 65 W | 65 W (dual-section) | 55 W | 70 W | 40 W |
| Operating Voltage (VDD) | 28 V | 28 V - same | 28 V - same | 28 V - same | 28 V - same |
| VDS Max Rating | 70 V | 70 V - same | 70 V - same | 70 V - same | 65 V |
| Topology | Single-ended | Dual-section (Doherty) | Single-ended | Single-ended | Single-ended |
Ключевые отличия
- Higher average output power in same NI-780S footprint (против MRF8P9040NR1)
- 920-960 MHz band optimization vs adjacent-band parts (против MRF8S7170NR3)
- Dual-section variant option for higher-power Doherty (против MRF8S9220HR3)
Заметки по проектированию
Estimated: At 28 V VDD, 65 W average W-CDMA output, and ~30% drain efficiency, total DC input power is ~217 W and dissipation is ~152 W. The NI-780S ceramic package requires a clamped or screw-down heatsink with thermal compound; aim for a heatsink thermal resistance below 0.5 C/W to keep junction temperature under 150 C. Forced-air cooling is mandatory for continuous W-CDMA operation. Always derate to 70% of rated Pout if the heatsink temperature exceeds 85 C ambient.
Place drain-side decoupling capacitors (10 uF electrolytic + 1 nF + 100 pF ceramic) within 5 mm of the package drain lead to suppress VDD ringing under W-CDMA envelope peaks. The input matching network should use a 50 Ohm microstrip line on the substrate directly abutting the gate lead, with a series DC-blocking capacitor at the gate. Keep the source ground leads (the package flange bottom) directly soldered to the PCB ground plane with multiple via fences for lowest source inductance.
Do not exceed 70 V VDS even transiently - antenna mismatch events can cause voltage doubling at the drain. Add a TVS clamp rated for 60 V working voltage between drain and ground. Gate bias should be applied before drain voltage (sequencing), and the gate voltage must be removed before drain voltage to prevent hot-switching damage. Confirm ESD precautions when handling the NI-780S package, as LDMOS gates are sensitive to static discharge despite integrated ESD protection.
The published series-equivalent output impedance tables in the NXP datasheet MRF8S9220H are referenced to the package leads, not the device intrinsic plane. Use these tables as the starting point for matching network synthesis, but expect 1-2 dB gain and efficiency variation between simulation and bench measurement due to parasitic layout effects. For Doherty configurations using the MRF8S9220HR3 variant, maintain 50 Ohm impedance at the combining point with quarter-wave transmission line transformers matched to the load-pull contours.
Информация о соответствии
Lead Free status confirmed per DigChip listing (NI-pad Au metallization typical for HV8 family). RoHS, REACH, halogen-free, and conflict minerals status not explicitly stated in verified web data - confirm against current NXP material declaration before RoHS-restricted designs.
