SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP
Артикул: SRF8S9260HSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1.320,00 |
| 100 | $118.5 | $11.850,00 |
| 500 | $105 | $52.500,00 |
| 1.000 | $92.5 | $92.500,00 |
SRF8S9260HSR3 Обзор
An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete lateral power device optimized for high-frequency amplification in the HF/VHF/UHF/microwave bands. Internally it integrates a large gate-periphery structure with low parasitic capacitances so it can deliver tens to hundreds of watts at GHz-range switching speeds. In the system hierarchy, it sits below the transceiver and above the antenna: the digital baseband is upconverted, mixed to RF, then amplified by the power MOSFET before reaching the duplexer and antenna. NXP's HV8 lateral process gives this family its 28 V operation and broadband 865-960 MHz coverage.
Key electrical features include 28 V drain-source operating voltage, 1.7 A typical quiescent drain current, and 18.6 dB small-signal gain at 960 MHz in a Class-AB reference circuit. The device can be biased for Class AB (linear) or Class C (high-efficiency) operation, allowing designers to trade spectral regrowth against DC-RF efficiency depending on the modulation format. Internal matching and an integrated thermal sensor pad simplify board-level integration.
Typical applications include W-CDMA, LTE, and multicarrier GSM base-station power amplifiers, RFID interrogators, and industrial RF heating where the same 28 V HV8 platform is reused across multiple bands.
When designing with this part, maintain a copper/thermal compound interface under the ceramic flange to keep the die below 200 degrees C, and verify load-pull impedance at the target frequency because the optimal matching network drifts between 865 MHz and 960 MHz.
This page synthesizes distributor pricing, same-brand drop-in alternatives from the MRF8S family, and practical RF design notes beyond what is found in the manufacturer datasheet alone.
Аналоги без доработки для SRF8S9260HSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с SRF8S9260HSR3 (тот же форм-фактор и посадочное место) — отличается по Mounting Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF8S9260HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8S9260HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8S9170HSR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF8S9102HSR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF8S9220HSR3
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$96.8 / шт.
Открыть даташит →SRF8S9260HSR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (Freescale legacy) |
| Part Family | MRF8S9260 / SRF8S9260 HV8 series |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET |
| Application Band | 920-960 MHz (usable 865-960 MHz) |
| Output Power (Avg) | 75 W (W-CDMA, 28 V) |
| Drain-Source Voltage (VDS) | 28 V |
| Quiescent Drain Current (IDQ) | 1.7 A typical |
| Power Gain (Gps) | 18.6 dB at 960 MHz |
| Корпус | NI-880S (ceramic, flanged) |
| Тип монтажа | Screw-mount, flange |
| Operating Mode | Class AB or Class C |
| Modulation Targets | CDMA, W-CDMA, multicarrier GSM |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов SRF8S9260HSR3
| Контакт 1 | Gate — RF input gate lead (top row) |
| Контакт 2 | Drain — RF output drain lead (top row) |
| Контакт 3 | Source — Source lead (top row, internally bonded to flange) |
| Контакт 4 | Gate — Gate lead (bottom row, dual gate for symmetry) |
| Контакт 5 | Drain — Drain lead (bottom row) |
| Контакт 6 | Source — Source lead (bottom row) |
| Контакт Flange | Source / Thermal Pad — Copper flange - primary source connection and thermal mounting surface |
Область безопасной работы (28 V operation)
Типичное применение
SRF8S9260HSR3 подходит для 6 применениеs: W-CDMA Cellular Base Station PA, Multicarrier GSM Power Amplifier, LTE Band 8 (900 MHz) Macro-Cell PA, RFID and Industrial RF Heating, Private LTE / Public-Safety Network PA, Broadcast FM Gap-Filler Repeater.
W-CDMA Cellular Base Station PA
The SRF8S9260HSR3 delivers 75 W average at 920-960 MHz from 28 V, suiting macro-cell W-CDMA final-stage PAs where linearity and ruggedness are required. Its 18.6 dB gain at 960 MHz in a Class-AB reference circuit lets a single device drive an antenna chain without an additional driver stage, simplifying the RF line-up. The NI-880S ceramic flange bolts directly to a heatsink or PCB copper coin, holding junction temperature below 200 degrees C under CW load. Compared to a smaller-package 10 W LDMOS, this part trades efficiency headroom for higher per-device output, reducing combiner complexity in multi-sector antenna arrays.
Рекомендуется
Multicarrier GSM Power Amplifier
For multicarrier GSM base stations operating in the 900 MHz band, the SRF8S9260HSR3 provides the linear headroom and thermal margin required when multiple carriers are summed at the antenna. The device can be biased into Class AB for the GSM linearized path or Class C for the CW/constant-envelope drive stage, letting the designer trade spectral regrowth against DC efficiency per carrier. The 28 V HV8 process delivers high breakdown voltage so two-carrier or four-carrier combining is possible without derating the safe operating area. Its broadband 865-960 MHz coverage supports re-tuning for both GSM900 and cellular IoT extensions.
Рекомендуется
LTE Band 8 (900 MHz) Macro-Cell PA
LTE Band 8 deployments at 925-960 MHz map directly to the SRF8S9260HSR3's operating window, making it a viable final-stage LDMOS for outdoor macro-cell eNodeB radios. The 75 W average rating supports 2x2 or 4x4 MIMO configurations where each chain needs roughly 40 W to hit a 46 dBm EIRP target after antenna combining. The lateral MOSFET architecture gives better gain linearity across the LTE resource-block bandwidth than older bipolar parts, lowering ACLR at high PAR. Designers reusing existing 28 V PA bays can drop the SRF8S9260HSR3 into the same NI-880S footprint with no thermal re-work.
Рекомендуется
RFID and Industrial RF Heating
UHF RFID interrogators and industrial RF heating systems operating at 865-960 MHz can leverage the SRF8S9260HSR3's broadband match and high CW power capability. In Class C bias the part delivers higher DC-RF efficiency than in linear mode, which directly reduces cooling requirements for continuous-duty industrial installations. The 28 V supply rail matches common industrial 24-30 V DC bus designs, simplifying power-conversion. The NI-880S ceramic package is mechanically rugged for vibration-prone factory environments, and its flange mounting accommodates cold-plate or fan-cooled heatsinks.
Рекомендуется
Private LTE / Public-Safety Network PA
Private LTE and public-safety broadband networks (Band 8, Band 20, Band 28 uplink portions) cluster around 900 MHz and benefit from the SRF8S9260HSR3's 75 W average power. Mission-critical infrastructure demands thermal headroom and gain stability across temperature extremes (-40 to +85 C ambient) - both of which the HV8 lateral process delivers when the heatsink is correctly sized. Using the SRF8S9260HSR3 as a final stage allows system integrators to standardize on one PA module that supports both commercial cellular and private-network deployments, reducing SKU count. Its NI-880S footprint matches older Freescale macro-PAs, easing field upgrades.
Рекомендуется
Broadcast FM Gap-Filler Repeater
Although primarily a cellular part, the SRF8S9260HSR3's broadband 865-960 MHz capability makes it usable as a final-stage LDMOS in FM broadcast gap-filler or translator service near 88-108 MHz when combined with appropriate matching. The high continuous-duty rating supports the always-on nature of broadcast transmitters, and the Class C bias mode maximizes wall-plug efficiency for 24/7 operation. The NI-880S ceramic package accepts standard broadcast PA heatsinks and RF connectors. Designers should re-do load-pull matching because the optimal impedance at 100 MHz differs substantially from 900 MHz, but the die itself is not the limiting factor.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для SRF8S9260HSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8S9260HSR3 | MRF8S9260HR3 | MRF8S9170HSR3 | MRF8S9102HSR3 | MRF8S9220HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Operating Band | 920-960 MHz | 920-960 MHz | 920-960 MHz | 900-930 MHz | 865-895 MHz | 920-960 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Ordering Code Prefix | SRF (legacy Freescale) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) |
| Lifecycle Status | active (legacy code, supported via Rochester/legacy stock) | active | active | active | active | active |
Ключевые отличия
- Legacy Freescale SRF ordering code still actively stocked (против MRF8S9260HSR3)
- Single part covers both 920-960 MHz cellular and adjacent bands (против MRF8S9102HSR3)
- 75 W average at 28 V in Class AB (против MRF8S9170HSR3)
Заметки по проектированию
Estimated: at Pout = 75 W and drain efficiency = 50%, the SRF8S9260HSR3 dissipates roughly 75 W as heat in CW operation. The NI-880S junction-to-flange thermal resistance is approximately 0.35 C/W, so a 75 W dissipation produces a 26 C junction-to-flange rise; with 25 C ambient and a 0.15 C/W heatsink, the junction sits near 63 C - well below the 200 C maximum but with thin margin under W-CDMA peaks. Use a fan-forced heatsink or a copper-coin PCB plus bolt-down flange to keep Tj below 150 C for long-term reliability.
The NI-880S source lead is internally bonded to the copper flange, so the mounting bolts must make low-inductance RF ground contact with the PCB copper coin. Solder the copper coin to a continuous ground plane using multiple vias, and keep the gate and drain traces short and 50 ohm matched. Use a microstrip or stripline board stack-up with 0.5-1.0 oz copper and a low-loss dielectric (Rogers RO4350B or equivalent) to preserve the 18.6 dB gain at 960 MHz.
Do not exceed VDS = 65 V (absolute maximum) or apply 28 V without a soft-start sequence, because in-rush current can trigger the avalanche breakdown. The datasheet's Class-AB reference circuit uses IDQ = 1.7 A; biasing significantly above this shifts the gain and efficiency curves. Always verify load-pull impedance at the target frequency - optimal match at 865 MHz is not the same as at 960 MHz, and a copy-pasted reference design may need board-level retuning.
Add a 10 nF ceramic bypass capacitor on the drain supply lead as close as possible to the package pin to suppress RF leakage back into the 28 V rail. Use a feed-through or lambda/4 stub to keep RF out of the bias-T network. Ferrite beads on the gate bias line help prevent parametric oscillation in Class AB, which is a common failure mode for HV8 LDMOS parts.
Информация о соответствии
RoHS and lead-free confirmed per NXP product page. AEC-Q100 not applicable for RF power MOSFET. Halogen-free status not explicitly listed in available data.
