MT41K256M16HA-187EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
Артикул: MT41K256M16HA-187EM:E ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $6 | $6.000,00 |
MT41K256M16HA-187EM:E Обзор
DDR3L SDRAM (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3, allowing operation in 1.5V mode when needed.
Key features include a 16n prefetch architecture, on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) for reduced power in idle states. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.
The MT41K256M16HA-187EM:E operates over a temperature range of 0°C to +95°C (TC) and is RoHS compliant. It features a 1.35V core and I/O supply, with a VDDQ of 1.35V. The device is compatible with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems where low power and high density are critical. The 4Gb density and x16 organization make it ideal for memory modules and systems requiring 256M x 16 configuration.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports a 1.5V compatible mode, allowing it to be used in systems designed for standard DDR3.
Аналоги без доработки для MT41K256M16HA-187EM:E — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT41K256M16HA-187EM:E (тот же форм-фактор и посадочное место) — отличается по CAS Latency, Supply Voltage, Clock Frequency, Package, Access Time.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT41K256M16HA-125:E
✅ Прямая замена✓ В наличии
$3.1 / шт.
Открыть даташит →MT41K256M16HA-107G:E
✅ Прямая замена✓ В наличии
$4 / шт.
Открыть даташит →MT41K256M16HA-187EIT:E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT41K256M16TW-107AAT:P
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
H5TC4G63MFR-G7C
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MT41K256M16HA-187EM:E Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Размер памяти | 4 Gbit |
| Организация памяти | 256M x 16 |
| Напряжение питания | 1.35 V |
| Скорость передачи данных | 1866 MT/s |
| Задержка CAS | 13 |
| Корпус | 96-FBGA (9x14 mm) |
| Рабочая температура | 0°C to +95°C (TC) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| REACH Status | Compliant |
| Access Time | 20 ns |
| Clock Frequency | 933 MHz |
| Интерфейс | Parallel |
| Количество выводов | 96 |
Конфигурация выводов MT41K256M16HA-187EM:E
| Контакт A1 | VDD — Power supply (1.35V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт B1 | VDDQ — I/O power supply (1.35V) |
| Контакт B2 | DQ2 — Data input/output 2 |
| Контакт B3 | DQ3 — Data input/output 3 |
| Контакт B4 | VSSQ — I/O ground |
| Контакт C1 | VDD — Power supply (1.35V) |
| Контакт C2 | DQ4 — Data input/output 4 |
| Контакт C3 | DQ5 — Data input/output 5 |
| Контакт C4 | VSS — Ground |
Типичное применение
MT41K256M16HA-187EM:E подходит для 6 применениеs: Server Memory Modules, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The MT41K256M16HA-187EM:E provides high-density, low-power memory for server DIMMs. Its 4Gb density and x16 organization enable compact module designs, while the 1.35V operation reduces power consumption in data centers. The 1866 MT/s data rate supports high-bandwidth workloads, and the FBGA package ensures reliable operation in server environments.
Рекомендуется
Networking Equipment
In networking switches and routers, the MT41K256M16HA-187EM:E offers the speed and capacity needed for packet buffering and forwarding tables. Its low voltage and high data rate help meet power budgets, while the 96-ball FBGA package fits space-constrained line cards. The device's compatibility with DDR3L controllers simplifies integration.
Рекомендуется
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16HA-187EM:E operates from 0°C to +95°C, making it suitable for factory floors and outdoor installations. Its 1.35V operation reduces heat generation, and the 4Gb density supports demanding industrial applications like machine vision and process control.
Рекомендуется
Embedded Systems
For embedded systems requiring high memory bandwidth, the MT41K256M16HA-187EM:E delivers 1866 MT/s in a compact FBGA package. Its low power consumption is ideal for battery-powered devices, and the x16 organization simplifies PCB routing. The device supports auto-refresh and self-refresh modes for efficient power management.
Рекомендуется
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the MT41K256M16HA-187EM:E provides the memory capacity and speed for smooth multimedia performance. Its 1.35V operation helps meet energy efficiency standards, and the 96-ball FBGA package is suitable for slim device designs. The device's compatibility with DDR3L controllers ensures easy integration.
Рекомендуется
Automotive Infotainment
The MT41K256M16HA-187EM:E is suitable for automotive infotainment systems that require high memory bandwidth for navigation, audio, and video processing. Its operating temperature range of 0°C to +95°C covers most automotive cabin environments, and the low voltage reduces power consumption. The FBGA package withstands vibration and thermal cycling.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT41K256M16HA-187EM:E — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT41K256M16HA-125:E | MT41K256M16HA-107G:E | H5TC4G63MFR-G7C |
|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1600 MT/s | 1066 MT/s | 1866 MT/s |
| CAS Latency | 13 | 11 | 7 | 13 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Ключевые отличия
- Higher data rate (1866 MT/s) compared to MT41K256M16HA-107G:E (против MT41K256M16HA-107G:E)
- Low voltage operation (1.35V) reduces power consumption (против Standard DDR3 (1.5V))
- Industrial temperature grade option available (MT41K256M16HA-187EIT:E) (против MT41K256M16HA-187EM:E)
Заметки по проектированию
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the Micron datasheet for DDR3L, including controlled impedance traces for DQ, DQS, and address/command signals. Ensure proper termination for the data bus.
The MT41K256M16HA-187EM:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal characteristics and derating curves.
For 1866 MT/s operation, maintain signal integrity by using proper PCB stack-up, impedance matching, and minimizing trace length mismatches. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Simulate the memory bus to verify timing margins.
Информация о соответствии
RoHS and REACH compliant per distributor data. Conflict minerals status is compliant per Abacus Technologies.
