MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
Артикул: MT41K256M16HA-15EM:E ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $5.95 | $5.950,00 |
MT41K256M16HA-15EM:E Обзор
DDR3L SDRAM is a type of dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard DDR3 (1.5V). It is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical. DDR3L is backward compatible with DDR3, allowing it to run in 1.5V mode when needed, as noted in the datasheet.
Key features include a 4Gb density, 16-bit data bus, 1.35V core power supply, and support for 1.5V operation. The device offers a burst length of 8, on-die termination (ODT), and programmable CAS latency. It is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
Technically, the MT41K256M16HA-15EM:E uses Micron's advanced DRAM process technology, providing high reliability and performance. The 96-ball FBGA package ensures compact footprint and good thermal characteristics. The device supports a wide operating temperature range, making it suitable for industrial applications.
Typical applications include networking equipment, servers, embedded computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs where power and space are constrained.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address/control lines.
Аналоги без доработки для MT41K256M16HA-15EM:E — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT41K256M16HA-15EM:E (тот же форм-фактор и посадочное место) — отличается по Data Rate, Package, CAS Latency, Supply Voltage, Operating Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT41K256M16HA-125:E
✅ Прямая замена✓ В наличии
$3.1 / шт.
Открыть даташит →MT41K256M16HA-107G:E
✅ Прямая замена✓ В наличии
$4 / шт.
Открыть даташит →MT41K256M16HA-125IT:E
✅ Прямая замена✓ В наличии
$4.5 / шт.
Открыть даташит →MT41K256M16HA-187EM:E
✅ Прямая замена✓ В наличии
$6 / шт.
Открыть даташит →H5TC4G63MFR-PBA
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.5 / шт.
Открыть даташит →K4B4G1646D-BYK00
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$7.5 / шт.
Открыть даташит →MT41K256M16HA-15EM:E Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Density | 4 Gbit |
| Организация памяти | 256M x 16 |
| Напряжение питания | 1.35 V (1.5V compatible) |
| Скорость передачи данных | 1333 Mbps (DDR3L-1333) |
| Задержка CAS | 15 |
| Корпус | 96-ball FBGA (9x14mm) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
| Количество выводов | 96 |
| Access Time | 13.75 ns |
| Clock Frequency | 800 MHz |
| Интерфейс | Parallel |
Конфигурация выводов MT41K256M16HA-15EM:E
| Контакт A1 | VDD — Power supply (1.35V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ2 — Data input/output 2 |
| Контакт B3 | DQ3 — Data input/output 3 |
| Контакт C1 | VDDQ — I/O power supply |
| Контакт C2 | DQ4 — Data input/output 4 |
| Контакт C3 | DQ5 — Data input/output 5 |
| Контакт D1 | VSSQ — I/O ground |
| Контакт D2 | DQ6 — Data input/output 6 |
| Контакт D3 | DQ7 — Data input/output 7 |
Типичное применение
MT41K256M16HA-15EM:E подходит для 6 применениеs: Networking Equipment, Embedded Computing, Consumer Electronics, Data Center Servers, Automotive Infotainment, Industrial Automation.
Networking Equipment
The MT41K256M16HA-15EM:E is ideal for networking equipment such as routers and switches, where high-density, low-power memory is essential. Its 4Gb density and 1.35V operation reduce power consumption in always-on devices, while the 1333 Mbps data rate supports high-throughput packet processing. The 96-ball FBGA package allows compact PCB layouts, and the device's compatibility with 1.5V systems provides design flexibility. In these applications, the memory is used for packet buffering and routing tables, requiring reliable operation over extended periods. The low voltage helps meet energy efficiency standards, and the wide operating temperature range ensures performance in various environments.
Рекомендуется
Embedded Computing
In embedded computing, the MT41K256M16HA-15EM:E provides a balance of density and power efficiency for applications like industrial PCs and single-board computers. Its 1.35V supply reduces heat generation, which is critical in fanless designs. The 256Mx16 organization simplifies memory interface design, and the 1333 Mbps speed is sufficient for most embedded workloads. The device's RoHS compliance and lead-free construction meet environmental regulations. The FBGA package's small footprint enables compact system design, and the memory's reliability ensures long-term operation in industrial environments. Designers can use this memory for OS execution, data logging, and real-time processing tasks.
Рекомендуется
Consumer Electronics
The MT41K256M16HA-15EM:E is well-suited for consumer electronics like set-top boxes, smart TVs, and gaming consoles, where cost and power efficiency are paramount. The 4Gb density supports multimedia applications, while the 1.35V operation extends battery life in portable devices. The 1333 Mbps data rate handles HD video streaming and gaming. The device's small FBGA package allows slim product designs. Its compatibility with 1.5V systems ensures interoperability with existing DDR3 controllers. The memory's low power consumption helps meet energy star ratings, and its high reliability ensures consumer satisfaction. This memory is used for system memory, frame buffering, and application processing.
Рекомендуется
Data Center Servers
In data center servers, the MT41K256M16HA-15EM:E offers a cost-effective memory solution for entry-level servers and storage systems. Its 4Gb density and 1.35V operation reduce power consumption, lowering operational costs. The 1333 Mbps data rate is adequate for many server workloads, and the device's reliability ensures minimal downtime. The FBGA package supports high-density DIMM designs. The memory's compatibility with 1.5V systems allows use in existing server platforms. For applications requiring higher performance, designers can choose the -125:E or -107G:E variants. This memory is used for caching, buffering, and main memory in cost-sensitive server deployments.
Рекомендуется
Automotive Infotainment
The MT41K256M16HA-15EM:E is suitable for automotive infotainment systems, where low power and high reliability are required. Its 1.35V operation reduces heat in the cabin, and the 4Gb density supports navigation, audio, and video applications. The 1333 Mbps data rate handles real-time media streaming. The device's wide operating temperature range ensures performance in extreme conditions. The FBGA package's robustness meets automotive vibration standards. The memory's compatibility with 1.5V systems allows integration with existing automotive SoCs. For automotive-grade requirements, consider the -125IT:E variant. This memory is used for system memory, graphics buffering, and application processing in infotainment units.
Рекомендуется
Industrial Automation
In industrial automation, the MT41K256M16HA-15EM:E provides reliable memory for PLCs, robotics, and HMI systems. Its low power consumption reduces heat in control cabinets, and the 4Gb density supports complex control algorithms. The 1333 Mbps data rate ensures fast data processing. The device's wide operating temperature range and RoHS compliance make it suitable for harsh industrial environments. The FBGA package's compact size allows space-efficient designs. The memory's compatibility with 1.5V systems ensures easy integration with industrial controllers. For extended temperature ranges, the -125IT:E variant is recommended. This memory is used for program storage, data logging, and real-time control.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT41K256M16HA-15EM:E — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT41K256M16HA-125:E | MT41K256M16HA-107G:E | H5TC4G63MFR-PBA |
|---|---|---|---|---|
| Package | 96-FBGA (9x14) | 96-FBGA (9x14) | 96-FBGA (9x14) | 96-FBGA (9x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1333 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps |
| CAS Latency | 15 | 12.5 | 10 | 12.5 |
Ключевые отличия
- Lower power consumption (против MT41K256M16HA-125:E)
- Cost-effective speed grade (против MT41K256M16HA-107G:E)
- Broad compatibility (против H5TC4G63MFR-PBA)
Заметки по проектированию
The MT41K256M16HA-15EM:E operates at 1.35V, which reduces power consumption by approximately 15% compared to 1.5V DDR3. Ensure the power supply is stable and within the specified range. Use low-ESR decoupling capacitors (0.1uF and 0.01uF) near each VDD and VDDQ pin to filter high-frequency noise. The VTT termination voltage should be set to VDDQ/2 for proper signal integrity.
Follow the layout guidelines in the Micron datasheet to ensure signal integrity. Route data, address, and control lines with controlled impedance (typically 50 ohms single-ended, 100 ohms differential). Keep trace lengths matched within 100 mils for data and address groups. Place the memory close to the controller to minimize trace length and reduce crosstalk. Use a solid ground plane beneath the FBGA package.
The FBGA package has a thermal resistance that depends on PCB design. For reliable operation, ensure adequate airflow or a thermal pad connected to a copper pour. The maximum junction temperature is typically 95C for DDR3L. Calculate power dissipation based on operating frequency and load. For high-density designs, consider using thermal vias under the package to improve heat dissipation.
Информация о соответствии
RoHS compliant and lead-free per datasheet. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
