10M50SCE144A7G vs 10M25SCE144A7G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 10M50SCE144A7G sa pamamagitan ng Intel at 10M25SCE144A7G sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | 10M50SCE144A7G | 10M25SCE144A7G |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | MAX 10 | — |
| Logic Elements (LE) | 50,000 | 25000 |
| Embedded Memory (M9K blocks) | [DATA_NEEDED: M9K block count and total bits] | — |
| Total User Flash Bits | 1,677,312 bits | — |
| User I/O Count | 101 | — |
| Number of LABs/CLBs | 3,125 | — |
| Supply Voltage - Core | 1.2 V (internal) | — |
| Supply Voltage - I/O | 3.0 V / 3.3 V LVCMOS/LVTTL | — |
| Temperature na Operasyon | -40C to +100C (industrial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging / Kaso | 144-LQFP Exposed Pad (EQFP-144) | — |
| Number of PLLs | 2 | — |
| Integrated ADC | 12-bit, 1 MSPS (analog inputs package-dependent) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (per JEDEC J-STD-020) | — |
| Configuration Method | On-chip non-volatile flash (instant-on, no external boot PROM) | — |
| Process Technology | TSMC 55 nm NOR-flash + SRAM | 55 nm CMOS |
| Family | — | MAX 10 |
| User Flash Memory | — | 691200 bits |
| Maximum User I/O | — | 101 |
| Core Supply Voltage | — | 1.2 V |
| Operating Voltage | — | 3.3 V |
| Packhaging | — | 144-LQFP Exposed Pad (EQFP EP) |
| Terminal Pitch | — | 0.5 mm |
| Temperature ng Junction na Operasyon | — | -40 C to +125 C |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (168 hours) |
| Packaging | — | Tray |
| Automotive Grade | — | AEC-Q100 |