2EP101RXTMA1 vs 1ED3142MC12HXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EP101RXTMA1 sa pamamagitan ng Infineon at 1ED3142MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 2EP101RXTMA1 1ED3142MC12HXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Full-Bridge Transformer Driver PMIC —
Topolohiya Full-bridge (H-bridge) with external transformer —
Supply Voltage Range 5 V to 20 V —
Maximum Output Power 5 W —
Switching Frequency Option 1 50 kHz —
Switching Frequency Option 2 65 kHz —
Duty Cycle Option 1 12% —
Duty Cycle Option 2 17% —
Bilang ng Outputs 1 (full-bridge differential primary) 2 (separate source/sink)
Packhaging PG-TSSOP-8 PG-DSO-8 (PG-LDSO-8-1)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Primary Application Isolated IGBT and SiC MOSFET gate driver supply —
RoHS Compliance Compliant —
Delivery Form Tape and Reel (XT suffix) —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Configuration — Inverting, Non-Inverting
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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