5M2210ZF256C5N vs 5M2210ZF256C4N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 5M2210ZF256C5N sa pamamagitan ng Intel at 5M2210ZF256C4N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 5M2210ZF256C5N 5M2210ZF256C4N
Brand Intel Altera
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family MAX V MAX V
Device Logic Elements 2,210 —
Macrocells 1,700 —
User I/Os 203 —
Maximum Internal Frequency 201.1 MHz —
Typical Propagation Delay (tPD) 7 ns —
Supply Voltage VCCINT 1.71 V to 1.89 V (1.8 V nominal) —
I/O Supply Voltage VCCIO 1.2 V to 3.3 V —
User Flash Memory 8 Kbits 8192 bits
Logic Array Blocks 4 —
Configuration Memory Non-volatile flash —
Programming Interface JTAG (IEEE 1149.1) - in-system JTAG (IEEE 1149.1) / IEEE 1532 ISP
Packhaging 256-ball FBGA (FineLine BGA), 1.0 mm pitch FBGA-256 (FineLine BGA)
Temperature na Operasyon 0 C to +85 C (commercial grade) 0C to 85C (Commercial)
Speed Grade 5 (fastest commercial) C4 (tPD ~4 ns class)
Lead Finish Lead-free (N suffix) —
Tindminan RoHS Compliant Compliant (Pb-free ball finish)
Device — 5M2210Z
Logic Elements (LEs) — 1700
Logic Array Blocks (LABs) — 221
Internal RAM — 212 Kbits
Maximum User I/O (family) — 203
User I/O (this package) — 160
Core Voltage (VCCINT) — 1.8 V
I/O Bank Voltage (VCCIO) — 1.5 V / 1.8 V / 2.5 V / 3.3 V
Number of I/O Banks — 4
Configuration Method — Internal flash (instant-on < 1 ms)
Process Technology — 0.30 um 6-metal-layer CMOS

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