AP63201WU-7 vs AP63205WU-7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AP63201WU-7 sa pamamagitan ng Diodes Incorporated at AP63205WU-7 sa pamamagitan ng Diodes Incorporated. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Diodes Incorporated
AP63201WU-7 - 2A 32V Sync Buck Converter, 22uA Iq | Diodes Inc
AP63201WU-7 ✓ NakahandaDiodes Incorporated
AP63205WU-7 - 32V, 2A Sync Buck Converter, TSOT-23-6 | Diodes Inc
AP63205WU-7 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AP63201WU-7 | AP63205WU-7 |
|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated |
| Kategorya | DC-DC Converters | DC-DC Converters |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $0.20 |
| Topolohiya | Synchronous Buck (Step-Down) | Synchronous Buck (Step-Down) |
| Hanay ng Voltage ng Input | 3.8 V to 32 V | 3.8 V to 32 V |
| Continuous Output Current | 2 A | 2 A |
| Hanay ng Output Volte | 0.8 V to VIN (Adjustable) | — |
| Reference Voltage Accuracy | 0.8 V ±1% | — |
| Takbo ng Pagpipili | 500 kHz (fixed) | 1.1 MHz |
| High-Side MOSFET RDS(on) | 125 mΩ | — |
| Low-Side MOSFET RDS(on) | 68 mΩ | — |
| Kuru-kuryente ng Kapayapaan | 22 µA (ultralow Iq) | 22 µA |
| Light-Load Efficiency | Up to 80% at 1 mA, 88% at 5 mA | Up to 80 % at 1 mA; up to 88 % at 5 mA |
| Light-Load Mode | PFM (AP63201 only) | — |
| Control Method | Peak Current Mode with Internal Compensation | PWM (regardless of load) |
| Packhaging | TSOT-26 (TSOT-23-6 Thin) | TSOT-23-6 (TSOT26) |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating junction temperature range] | -40 °C to +85 °C (TA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | — |
| Output Volte | — | Fixed 5 V |
| High-Side MOSFET Rds(on) | — | 125 mΩ |
| Low-Side MOSFET Rds(on) | — | 68 mΩ |
| Internal Reference Voltage | — | 0.8 V ±1 % |
| Protection Features | — | Cycle-by-cycle peak current limit, hiccup-mode overload protection |