BSC011N03LSATMA1 vs BSC0501NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSATMA1 sa pamamagitan ng Infineon at BSC0501NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Nakahanda
Infineon
BSC0501NSIATMA1 BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC011N03LSATMA1 BSC0501NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) [DATA_NEEDED: IDM]
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-1 (SuperSO8) PG-TDSON-8-6 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 5 25V/30V
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Temperature ng Junction na Operasyon — -55C to +150C
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

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