BSC014N04LSATMA1 vs BSC0502NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSATMA1 sa pamamagitan ng Infineon at BSC0502NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC014N04LSATMA1 BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC014N04LSATMA1 BSC0502NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Ta 32 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10 V 1.4 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 96 W —
Gate-Source Voltage (VGS) max 20 V —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +150C
Packhaging SuperSO8 (TDSON-8 FL) 5x6 mm PG-TDSON-8 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) OptiMOS 5 (Trench MOSFET)
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (unlimited) —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

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