BSC014N04LSIATMA1 vs BSC019N04NSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSIATMA1 sa pamamagitan ng Infineon at BSC019N04NSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Nakahanda
Infineon
BSC019N04NSGATMA1 BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC014N04LSIATMA1 BSC019N04NSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (trench, thin-wafer) OptiMOS (trench)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, Ta) 31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10 V 1.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc) 96 W —
Power Dissipation (PD, Ta) 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C -55C to +150C
Packhaging PG-TDSON-8 FL (TDSON-8 with exposed drain pad) PG-TDSON-8-1 (TDSON-8 FL)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant Compliant
Tradename OptiMOS —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 30 A
RDS(on) max at VGS=10V — 2.5 mΩ
RDS(on) typ at VGS=10V — 1.9 mΩ
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C — 2.5 W
Power Dissipation (PD) at TC=25C — 125 W

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