BSC016N06NSATMA1 vs IRLR7843TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC016N06NSATMA1 sa pamamagitan ng Infineon at IRLR7843TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC016N06NSATMA1 | IRLR7843TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | 34 nC |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55C to +175C |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6) | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | — |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | HEXFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |