BSC016N06NSATMA1 vs IRLR7843TRPBF Comparison
Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and IRLR7843TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC016N06NSATMA1 | IRLR7843TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Product Series | OptiMOSβ’ 5 60V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, TA) | 30 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΞ© | β |
| Total Gate Charge (Qg) | 71 nC | 34 nC |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 139 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +175C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | β |
| Gate Drive (recommended) | 10 V | β |
| Technology | OptiMOSβ’ 5 | HEXFET |
| Polarity | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 161 A |
| Power Dissipation (Pd) @ Tc=25C | β | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | β | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | β | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage Max | β | Β±20 V |
| Avalanche Energy (Eas) | β | Fully characterized |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |