BSC018N04LSGATMA1 vs IAUC100N04S6N028ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC018N04LSGATMA1 sa pamamagitan ng Infineon at IAUC100N04S6N028ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Nakahanda
Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC018N04LSGATMA1 IAUC100N04S6N028ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 OptiMOS 6 40V
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Continuous Drain Current (ID) @ TA=25°C 30 A —
Power Dissipation (PD) @ TC=25°C 125 W —
Power Dissipation (PD) @ TA=25°C 2.5 W —
RDS(on) Max @ VGS=10 V 1.8 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Hanay ng Temperature na Operasyon -55°C to +150°C (TJ) -55 °C to +175 °C
Packhaging PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (Pb-free plating) Compliant
Avalanche Tested 100% (per datasheet) —
JEDEC Qualification Yes (qualified per JEDEC for target applications) —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at T_C=25°C — 100 A
Pulsed Drain Current (I_DM) — 400 A
R_DS(on) max @ V_GS=10V — 2.8 mΩ (typical)
Gate Threshold Voltage (V_GS(th)) — 1.5 V to 2.5 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25°C — 62 W
Automotive Qualified — Yes

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