BSC018N04LSGATMA1 vs IPG20N04S4L07ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC018N04LSGATMA1 sa pamamagitan ng Infineon at IPG20N04S4L07ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Nakahanda
Infineon
IPG20N04S4L07ATMA1 IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon

IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon

IPG20N04S4L07ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC018N04LSGATMA1 IPG20N04S4L07ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 OptiMOS™ T2
FET Type N-Channel 2x N-Channel (Dual, Independent)
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) @ TC=25°C 100 A —
Continuous Drain Current (ID) @ TA=25°C 30 A —
Power Dissipation (PD) @ TC=25°C 125 W —
Power Dissipation (PD) @ TA=25°C 2.5 W —
RDS(on) Max @ VGS=10 V 1.8 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Hanay ng Temperature na Operasyon -55°C to +150°C (TJ) —
Packhaging PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-4 (TDSON-8-4)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (Pb-free plating) —
Avalanche Tested 100% (per datasheet) 100% (per datasheet)
JEDEC Qualification Yes (qualified per JEDEC for target applications) —
Continuous Drain Current (ID) — 20 A
RDS(on) Max @ VGS=10V — 7.2 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation (PD) Max — 65 W
Temperature ng Junction na Operasyon — -55°C to +175°C
Logic-Level Gate Drive — Yes (4.5V VGS fully enhanced)
Level ng MSL — MSL1 (per JEDEC J-STD-020, 260°C peak reflow)
AEC-Q101 Qualification — Qualified
RoHS / Lead-Free — RoHS compliant, lead-free terminations

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita