BSC019N04LSTATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N04LSTATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC019N04LSTATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 (N-channel trench MOSFET) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Hanay ng Temperature na Operasyon -55 C to +150 C —
Packhaging TDSON-8 (SuperSO8) 5x6 mm —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) —
Tindminan RoHS Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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