BSC0501NSIATMA1 vs BSC0911NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0501NSIATMA1 sa pamamagitan ng Infineon at BSC0911NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0501NSIATMA1 BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 ✓ Nakahanda
Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0501NSIATMA1 BSC0911NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V OptiMOS 25V
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 30 A
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge]
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-6 (SuperSO8) PG-TISON-8 (8-PowerTDFN)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 OptiMOS trench MOSFET
Configuration — Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) — 18 A
Power Dissipation (PD) — 1 W
Temperature na Operasyon — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]

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