BSC0501NSIATMA1 vs BSC0993NDATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0501NSIATMA1 sa pamamagitan ng Infineon at BSC0993NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC0501NSIATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg value] |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-6 (SuperSO8) | PG-TISON-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Technology | Trench-gate OptiMOS 5 | OptiMOS 5 trench MOSFET |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |