BSC050N04LSGATMA1 vs BSC028N06NSTATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC050N04LSGATMA1 sa pamamagitan ng Infineon at BSC028N06NSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC050N04LSGATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | MOSFET N-Channel (OptiMOS 5) |
| Packhaging | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Part Number Base | — | BSC028N06NS |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Wala sa Halogen | — | Yes |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |