BSC050NE2LSATMA1 vs BSC010NE2LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC050NE2LSATMA1 sa pamamagitan ng Infineon at BSC010NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC050NE2LSATMA1 BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 ✓ Nakahanda
Infineon
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC050NE2LSATMA1 BSC010NE2LSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (V_DS) 25 V —
Continuous Drain Current (I_D) at Tc=25C 58 A —
Continuous Drain Current (I_D) at Ta=25C 39 A —
R_DS(on) max at V_GS=10V 5 mOhm —
R_DS(on) typical at V_GS=10V 4.2 mOhm —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 28 W —
Technology OptiMOS 25V (trench) OptiMOS (Trench)
Packhaging PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-7 (TDSON-8 EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C (TJ)
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series / Family — OptiMOS 25V
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Bilang ng Pin — 8
Gate Drive — Logic-level compatible
Level ng MSL — [DATA_NEEDED: MSL rating]
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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