BSC059N04LSGATMA1 vs BSC035N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC059N04LSGATMA1 sa pamamagitan ng Infineon at BSC035N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC059N04LSGATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 3 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 73 A —
Continuous Drain Current (ID, Ta=25C) 16 A —
On-State Resistance RDS(on) max @ VGS=10V 5.9 mOhm —
Power Dissipation (Tc=25C) 50 W —
Power Dissipation (Ta=25C) 2.5 W —
Gate-Source Threshold Voltage VGS(th) 1.2 V to 2.0 V (typ) —
Total Gate Charge Qg [DATA_NEEDED: Qg total, typical nC] —
Hanay ng Temperature na Operasyon -55 C to +150 C —
Packhaging PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (8-pin, exposed drain pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant Compliant
REACH Status Compliant —
Channel Type N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Ta=25°C — 21 A
RDS(on) Max at VGS=10V — 3.5 mΩ
Gate Threshold Voltage (VGS(th)) — 1.7 V (typ)
Power Dissipation (Pd) at Ta=25°C — 2.5 W
Power Dissipation (Pd) at Tc=25°C — 69 W
Temperature ng Junction na Operasyon — -55°C to +150°C
Lead-Free — Yes

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