BSC0993NDATMA1 vs BSC027N10NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0993NDATMA1 sa pamamagitan ng Infineon at BSC027N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC0993NDATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Packhaging PG-TISON-8 PG-TSON-8-3 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (100V)
Channel Mode Enhancement —
Hanay ng Temperature na Operasyon -55C to +150C (junction) [DATA_NEEDED: Tj min/max]
ESD Protection Yes (integrated) —
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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