BSL316CH6327XTSA1 vs BSS316NH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSL316CH6327XTSA1 sa pamamagitan ng Infineon at BSS316NH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSL316CH6327XTSA1 BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 ✓ Nakahanda
Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSL316CH6327XTSA1 BSS316NH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family OptiMOS small-signal complementary MOSFET —
Configuration Complementary pair (1 N-channel + 1 P-channel in one package) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel ID) 1.4 A —
Continuous Drain Current (P-channel ID) 1.5 A —
Total Power Dissipation (Ptot) 500 mW —
Packhaging PG-TSOP6-6 (TSOP6, 6-pin) PG-SOT23 (SOT-23-3)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (junction) —
Technology OptiMOS low-voltage MOSFET OptiMOS 2 (Trench)
Channel Type N-channel + P-channel (dual) —
Bilang ng Pin 6 —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] MSL1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Hanay ng Temperature ng Junction na Operasyon — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
Automotive Qualification — AEC-Q101 qualified

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