BSP125H6433XTMA1 vs BSP89H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP125H6433XTMA1 sa pamamagitan ng Infineon at BSP89H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP125H6433XTMA1 | BSP89H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at TA | 120 mA | — |
| Power Dissipation (PD) at TA | 1.8 W | — |
| Packhaging | PG-SOT223-4 (3+tab) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per ordering code H6327) |
| Lead Plating | Pb-free | — |
| Tindminan RoHS | Compliant | Compliant |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55 °C to +150 °C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | — |
| Configuration | Single N-Channel MOSFET | — |
| Uri ng Transistor | — | N-Channel MOSFET, enhancement mode |
| Technology | — | SIPMOS (planar power MOS) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | — | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | — | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | — | 6 Ω (typical) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Thermal Resistance Junction-Ambient (RthJA) | — | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | — | 25 K/W |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| dv/dt Rated | — | Yes |
| ESD Protection | — | Internal gate-source Zener |