BSZ0901NSIATMA1 vs BSC084P03NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0901NSIATMA1 sa pamamagitan ng Infineon at BSC084P03NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ0901NSIATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Packhaging | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 58 nC @ VGS = -10 V |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (Ta) | — | 14.9 A |
| Continuous Drain Current (Tc) | — | 78.6 A |
| Rds(on) max @ VGS = -10 V | — | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | — | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | — | -1.7 V |
| Input Capacitance (Ciss) | — | 3.19 nF |
| Output Capacitance (Coss) | — | 110 pF |
| Reverse Transfer Capacitance (Crss) | — | 1.52 nF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Technology Family | — | OptiMOS P3 |
| Level ng MSL | — | 1 (unlimited) |