BUF634U vs BUF634P Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BUF634U sa pamamagitan ng Texas Instruments at BUF634P sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BUF634U | BUF634P |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Kategorya | Amplifier ICs | Amplifier ICs |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Amplifier Type | Open-Loop Buffer (unity gain) | — |
| Number of Channels | 1 | 1 |
| Output Current | 250 mA | 250 mA |
| Slew Rate | 2000 V/us | 2000 V/us |
| Bandwidth | 180 MHz (full) / 30 MHz (low power, pin-selected) | — |
| Kuru-kuryente ng Kapayapaan | 1.5 mA (30 MHz BW mode) | 1.5 mA (30 MHz BW mode) |
| Supply Voltage Range | +/-2.25 V to +/-18 V (4.5 V to 36 V total) | +/-2.25 V to +/-18 V |
| Voltage Gain | Unity (buffer) | — |
| Protection Features | Internal current limit, thermal shutdown | Internal current limit, thermal shutdown |
| Bandwidth Selection | Pin-selectable (BW pin) | — |
| Packhaging | 8-SOIC (0.154 in, 3.90 mm width) | 8-PDIP (P) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Polarity | Single / Dual Supply | — |
| Product Status | Not recommended for new designs (NRND); BUF634A recommended | — |
| Datasheet Revision | BUF634 datasheet (Rev. C) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Fungsi | — | High-speed unity-gain buffer |
| Bandwidth (pin-selected) | — | 180 MHz (BW to V+) / 30 MHz (BW open) |
| Gain | — | 1 V/V (unity, open-loop buffer) |
| Input Offset Voltage | — | [DATA_NEEDED: input offset voltage] |
| Output Resistance | — | [DATA_NEEDED: output resistance] |
| Upgrade Path | — | BUF634A (higher slew 3750 V/us, 210 MHz BW, 8.5 mA IQ) |