EP1C20F400C8 vs EP1C20F40017 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C20F400C8 sa pamamagitan ng Altera at EP1C20F40017 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C20F400C8 | EP1C20F40017 |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Series | Cyclone I | — |
| Logic Elements | 20,060 LE | 20,060 |
| Logic Array Blocks (LABs) | 2,006 | — |
| Embedded Memory | 294,912 bits (288 Kbit) | — |
| Embedded Multipliers | Embedded 18 × 18 blocks | — |
| Maximum User I/O | 301 | — |
| Process Technology | 130 nm CMOS (SRAM-based) | 0.13 µm SRAM |
| Core Supply Voltage (VCCINT) | 1.5 V | — |
| I/O Supply Voltages | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| PLLs | 2 (one per device quadrant) | 2 |
| Maximum Internal Frequency | 275.03 MHz (typical) | — |
| Packhaging | 400-ball FBGA (FineLine BGA), 21 × 21 mm, 1.0 mm pitch | FBGA-400 (FineLine BGA) |
| Configuration Modes | Passive Serial (PS), Active Serial (AS), JTAG | — |
| Operating Temperature (Commercial) | 0 °C to +85 °C | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Configuration Memory | SRAM (volatile, reload required at power-up) | — |
| Family | — | Cyclone |
| Embedded Memory (bits) | — | 294,912 |
| M4K RAM Blocks | — | 64 |
| Maximum User I/O Pins | — | 301 |
| Speed Grade | — | -17 |
| Core Voltage (VCCINT) | — | 1.5 V |
| I/O Voltage Standards | — | LVTTL, LVCMOS, SSTL, HSTL, LVDS |
| Ball Pitch | — | 0.8 mm |
| Configuration Method | — | Serial (AS mode) or JTAG |
| Temperature na Operasyon | — | 0 °C to +85 °C (commercial) |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |