EP1K10TC100-2N vs EP1K10TC100-1N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP1K10TC100-2N sa pamamagitan ng Altera at EP1K10TC100-1N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Altera
EP1K10TC100-2N EP1K10TC100-2N - ACEX-1K FPGA, 10K Gates, 576 Cells | Altera

EP1K10TC100-2N - ACEX-1K FPGA, 10K Gates, 576 Cells | Altera

EP1K10TC100-2N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EP1K10TC100-2N EP1K10TC100-1N
Brand Altera Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Huling Pagbili Obsolete
Family ACEX-1K ACEX-1K
Logic Elements / Cells 576 576
Typical Gates 10,000 —
Logic Array Blocks (LABs) 72 72
Embedded Memory (EAB) 12,288 bits —
Maximum User I/O 66 —
Process Technology 0.22 um CMOS 0.22 µm CMOS SRAM
Core Voltage (VCCINT) 2.5 V —
I/O Voltage (VCCIO) 1.8 V / 2.5 V / 3.3 V / 5 V —
Speed Grade -2 -1N (commercial, slower tier)
Maximum Frequency 200 MHz —
Packhaging 100-pin TQFP (1.0 mm body, 0.5 mm pitch) 100-pin TQFP (14 mm x 14 mm, 1 mm height)
Temperature na Operasyon 0 C to +70 C (commercial) 0 °C to 70 °C (commercial)
Configuration Modes Passive Serial, Active Serial, JTAG —
Uri ng Pagpapasok Surface Mount Surface Mount (gull-wing)
Tindminan RoHS Lead-free / RoHS compliant Compliant
Series — EP1K10
Total Gates (typical) — 10,000
Embedded RAM Bits — 12,288 bits
Embedded Array Blocks (EABs) — 3 x 4 Kbit
User I/Os — 66
Core Supply Voltage — 2.5 V (2.375 V to 2.625 V)
Configuration Method — SRAM (external PROM required)
JTAG Support — Yes (IEEE 1149.1 boundary-scan)

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