EP1K30FC256-3N vs EP1K30FC256-1N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K30FC256-3N sa pamamagitan ng Intel at EP1K30FC256-1N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K30FC256-3N | EP1K30FC256-1N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Family | ACEX 1K | ACEX-1K |
| Logic Elements / Cells | 17,288 logic elements (1,728 cells) | — |
| Typical Gates | 30,000 | 30,000 |
| Total RAM Bits | 24,576 | — |
| Number of LABs | 216 | — |
| User I/Os | 171 | — |
| Core Supply Voltage | 2.375 V to 2.625 V (nominal 2.5 V) | — |
| Technology | 0.22 µm CMOS, SRAM configuration | — |
| Speed Grade | -3 | -1 |
| Propagation Delay (typ.) | 0.6 ns | — |
| Maximum Frequency | 200 MHz | — |
| Packhaging | 256-ball FineLine BGA (FBGA-256) | 256-BGA (FineLine BGA, 17x17 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0 °C to +70 °C (commercial) | 0C to +70C (commercial) |
| Configuration | SRAM, serial/parallel, JTAG ISP (IEEE 1149.1) | — |
| Logic Elements | — | 1,728 |
| Embedded RAM Bits | — | 24,576 |
| Maximum User I/O | — | 171 |
| Supply Voltage - Core | — | 2.5 V |
| Number of I/O Banks | — | [DATA_NEEDED: I/O banks] |
| Process Technology | — | 0.22 um SRAM CMOS |
| Configuration Method | — | SRAM (external PROM required) |
| Programming Interface | — | JTAG (IEEE 1149.1) |
| Lead Free / RoHS | — | Lead free per Altera/Intel product declaration |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Internal Max Frequency | — | up to 250 MHz (family typical) |