EP1K30FC256-3N vs EP1K30FC256-1N 比較
詳細並排比較 EP1K30FC256-3N 由 Intel 與 EP1K30FC256-1N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP1K30FC256-3N | EP1K30FC256-1N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | Obsolete |
| Family | ACEX 1K | ACEX-1K |
| Logic Elements / Cells | 17,288 logic elements (1,728 cells) | — |
| Typical Gates | 30,000 | 30,000 |
| Total RAM Bits | 24,576 | — |
| Number of LABs | 216 | — |
| User I/Os | 171 | — |
| Core Supply Voltage | 2.375 V to 2.625 V (nominal 2.5 V) | — |
| Technology | 0.22 µm CMOS, SRAM configuration | — |
| Speed Grade | -3 | -1 |
| Propagation Delay (typ.) | 0.6 ns | — |
| Maximum Frequency | 200 MHz | — |
| 封裝 | 256-ball FineLine BGA (FBGA-256) | 256-BGA (FineLine BGA, 17x17 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0 °C to +70 °C (commercial) | 0C to +70C (commercial) |
| Configuration | SRAM, serial/parallel, JTAG ISP (IEEE 1149.1) | — |
| Logic Elements | — | 1,728 |
| Embedded RAM Bits | — | 24,576 |
| Maximum User I/O | — | 171 |
| Supply Voltage - Core | — | 2.5 V |
| Number of I/O Banks | — | [DATA_NEEDED: I/O banks] |
| Process Technology | — | 0.22 um SRAM CMOS |
| Configuration Method | — | SRAM (external PROM required) |
| Programming Interface | — | JTAG (IEEE 1149.1) |
| Lead Free / RoHS | — | Lead free per Altera/Intel product declaration |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Internal Max Frequency | — | up to 250 MHz (family typical) |