EP1M120F484-I6 vs EP1M120F484C8ES Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP1M120F484-I6 sa pamamagitan ng Altera at EP1M120F484C8ES sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP1M120F484-I6 EP1M120F484C8ES
Brand Altera Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Obsolete
Family Mercury FPGA ACEX 1M
Logic Elements (LEs) 4,800 —
Equivalent Gates 120,000 —
Logic Array Blocks (LABs) 480 —
User I/Os 303 —
High-Speed Transceivers Up to 12 channels —
Transceiver Data Rate Up to 1.25 Gbps per channel —
Core Voltage 1.8 V —
Process Technology 0.18 µm CMOS 0.18 µm CMOS, SRAM-based
Packhaging 484-pin FBGA (FineLine BGA) 484-ball FineLine BGA
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Temperature na Operasyon -40 °C to +100 °C (industrial) [DATA_NEEDED: industrial/commercial grade temp range]
Speed Grade -6 C8 (-8 speed bin)
Configuration Modes Passive Serial, Passive Parallel Sync/Async, JTAG, EPC device —
I/O Standards LVTTL, LVCMOS, PCI, LVDS, LVPECL, HSTL LVTTL, LVCMOS, True-LVDS, PCI
Manufacturer — Intel (formerly Altera)
Logic Elements / Gates — 120,000 (120K gates)
Embedded Logic Cells (EABs) — 4,800
User I/O Pins — 303
Sample Grade — ES (Engineering Sample)
Embedded RAM — ~104 Kbits across 12 RAM blocks
PLLs — 4 enhanced PLLs
Operating Voltage (Core) — [DATA_NEEDED: core VCC range]
MultiVolt I/O Support — 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant
Configuration Method — SRAM bitstream, JTAG/serial
Tindminan RoHS — [DATA_NEEDED]

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