EP2AGZ225FF35I4N vs EP2AGZ225FF35I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2AGZ225FF35I4N sa pamamagitan ng Intel at EP2AGZ225FF35I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2AGZ225FF35I4N | EP2AGZ225FF35I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Arria II GZ | Arria II GZ |
| Logic Elements (LEs) | 224000 | — |
| Number of LABs/CLBs | 8960 | — |
| Total Memory Bits | 14248960 | — |
| Number of I/O | 554 | — |
| Supply Voltage - Core | 0.9 V | — |
| Process Technology | 40 nm | 40 nm |
| Maximum Operating Frequency | 500 MHz | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40C to +100C (Industrial) |
| Packhaging / Kaso | 1152-BBGA, FCBGA | — |
| Package Dimensions | 35 mm x 35 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Temperature Grade | Industrial (I4) | — |
| Logic Elements (LE) | — | 224,000 |
| Embedded Memory | — | 14,248,960 bits (approx. 14.25 Mbit) |
| Logic Array Blocks (LABs) | — | 8,960 |
| User I/O Count | — | 554 |
| Maximum Transceiver Data Rate | — | 6.375 Gbps |
| Transceiver Channels | — | 24 |
| Core Voltage | — | 0.9 V |
| Packhaging | — | 1152-ball FC-FBGA |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Configuration Method | — | SRAM-based (volatile, requires external config device) |
| Maximum User I/O | — | 554 |