EP2C35F484C7N vs EP2C35F484C7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP2C35F484C7N sa pamamagitan ng Intel at EP2C35F484C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP2C35F484C7N EP2C35F484C7
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone II —
Logic Elements (LEs) 33,216 —
Total Memory Bits 483,840 bits 483,840 bits
Embedded Memory (M4K blocks) 105 —
Embedded 18x18 Multipliers 35 —
User I/O Pins 322 —
Packhaging 484-ball FBGA (FineLine BGA) 484-pin FBGA (FineLine BGA)
Process Technology 90 nm CMOS, SRAM-based 90 nm CMOS, 1.2 V core
Core Voltage (VCCINT) 1.2 V —
I/O Bank Voltage (VCCIO) 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) —
PLL Count 4 —
Global Clock Networks 16 16
Maximum User Frequency 402 MHz (internal logic) —
Configuration Modes JTAG, Active Serial (AS), Passive Serial (PS), PPA JTAG, Passive Serial (PS), Active Serial (AS)
Temperature na Operasyon 0C to +85C (commercial, 'C7' suffix) 0 C to 85 C (Commercial)
Tindminan RoHS Compliant (lead-free) —
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount
Series — Cyclone II
Manufacturer — Intel (formerly Altera)
Logic Elements — 33,216 LE
Number of Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count]
Embedded Multipliers (18x18) — 35
Maximum User I/O — 322
Number of PLLs — 4
Core Voltage — 1.2 V
I/O Standards — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Support — DDR, DDR2, QDRII SRAM
Lead-Free / RoHS — Lead-Free (per 'N' suffix not present; C7 = commercial temp)

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