EP3C40F780C8 vs EP3C40F780C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C40F780C8 sa pamamagitan ng Intel at EP3C40F780C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C40F780C8 | EP3C40F780C6N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | 39,600 |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | — |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | — |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Maximum User I/O Pins | 535 | 535 |
| Process Technology | 65 nm low-power CMOS | 60 nm CMOS |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | 6 (commercial) |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | — |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (FBGA) |
| Embedded Memory Bits | — | 1,161,216 |
| Embedded Memory (Kbytes) | — | 113 |
| M9K Memory Blocks | — | 126 |
| Logic Array Blocks (LABs) | — | 4,065 |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Temperature na Operasyon | — | 0C to +85C (commercial) |
| Package Dimensions | — | 29 x 29 mm |
| Ball Pitch | — | 1.0 mm |
| Package Height | — | 2.6 mm |
| Lead Free | — | Yes |
| Configuration Method | — | SRAM, JTAG via USB-Blaster |