EP3C40F780C8N vs EP3C40F780C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C40F780C8N sa pamamagitan ng Intel at EP3C40F780C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C40F780C8N | EP3C40F780C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Series | Cyclone® III | — |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 39,600 | 39,600 |
| Total Memory Bits | 1,161,216 bits | 1,161,216 bits |
| Number of LABs/CLBs | 2,475 | — |
| Embedded Memory Blocks | M9K x 126 | — |
| Embedded 18x18 Multipliers | 126 (up to 396 9x9) | 126 |
| Number of PLLs | 4 | 4 |
| Maximum User I/Os | 535 | — |
| Number of I/O Banks | 9 | — |
| Core Voltage | 1.15V to 1.25V | — |
| Temperature na Operasyon | 0°C to +85°C (Commercial) | 0C to +85C (Commercial) |
| Speed Grade | 8 (C8) | C7 |
| Packhaging | 780-ball FBGA, 1.0mm pitch | 780-ball FBGA (F780) |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Process Technology | 65nm TSMC low-power | 60 nm TSMC low-power CMOS |
| Configuration Modes | AS, PS, FPP, JTAG | — |
| Tindminan RoHS | Compliant | Compliant |
| Number of Logic Cells | — | 39,600 |
| User I/O Count | — | 535 |
| I/O Banks | — | 8 |
| Package Dimensions | — | 29 x 29 mm |
| Ball Pitch | — | 1.0 mm |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Configuration | — | Active Serial / Passive Parallel (JTAG) |
| Level ng MSL | — | 3 (168 hours) |