EP3SE50F780C3N vs EP3SE50F780C4LN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780C3N sa pamamagitan ng Intel at EP3SE50F780C4LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE50F780C3N | EP3SE50F780C4LN |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 47,500 | 47,500 |
| Logic Array Blocks (LABs) | 1,900 | — |
| Embedded Memory (M9K blocks) | 312 | — |
| Total Embedded Memory | 5,760 Kbit (5.76 Mbit) | — |
| DSP Blocks | 432 | Yes (embedded multipliers) |
| Maximum User I/Os | 488 | — |
| Number of PLLs | 4 | — |
| Process Technology | 65 nm | — |
| Core Voltage | 1.1 V | 0.9 V |
| Speed Grade | C3 (medium) | C4 |
| Temperature Grade | Commercial (0C to +85C) | — |
| Packhaging | 780-ball FC-FBGA | 780-ball FC-FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| LABs (Logic Array Blocks) | — | 1,900 |
| Embedded Memory | — | 5,760,000 bits |
| User I/Os | — | 488 |
| Process Node | — | 65 nm |
| Temperature na Operasyon | — | 0°C to 85°C (Commercial) |
| Lead-Free / RoHS | — | Yes (L suffix) |
| Maximum Toggle Frequency | — | 375 MHz |
| Configuration Modes | — | Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG |
| Block RAM Type | — | M9K + M144K |
| Memory Architecture | — | SRAM-based, reprogrammable |