EP3SE80F1152C3N vs EP3SE80F1152C2N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE80F1152C3N sa pamamagitan ng Intel at EP3SE80F1152C2N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE80F1152C3N | EP3SE80F1152C2N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Series | Stratix III E | Stratix III E |
| Logic Elements (LEs) | 80,000 | 80,000 |
| Total Memory Bits | 6,843,392 bits | — |
| Number of LABs/CLBs | 3200 | — |
| Number of User I/O | 744 | — |
| Bilang ng Outputs | 744 | — |
| Packhaging / Kaso | 1152-BBGA, FCBGA (FineLine BGA) | — |
| Temperature na Operasyon | 0C to +85C (commercial, C3 grade) | 0C to +85C (Commercial) |
| Speed/Power Grade | C3 | — |
| Process Technology | 40 nm CMOS | 65 nm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Level ng MSL | 3 (per JEDEC J-STD-020) | 3 (168 hours) |
| Configuration Memory | SRAM-based, volatile (needs external config device) | — |
| Tindminan RoHS | Compliant | — |
| Family | — | Stratix III E |
| Device Type | — | FPGA - Field Programmable Gate Array |
| Logic Array Blocks (LABs) | — | 3,200 |
| Embedded Memory | — | 6,843,392 bits (6.84 Mbit) |
| Embedded Multipliers (9x9) | — | 488 |
| Maximum User I/Os | — | 744 |
| Core Supply Voltage | — | 1.1 V |
| Internal Frequency (max) | — | 800 MHz |
| Packhaging | — | 1152-BBGA, FCBGA (FineLine BGA) |
| Configuration Method | — | JTAG / Passive Serial / Fast Passive Parallel |