EP4CE115F23C8N vs EP4CE15F23C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE115F23C8N sa pamamagitan ng Intel at EP4CE15F23C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE115F23C8N | EP4CE15F23C8N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements | 114,480 LE | 15,408 |
| Embedded Memory | 3,981,312 bits (3.8 Mbit) | — |
| User I/O Count | 280 | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: LAB count] | — |
| Embedded 18x18 Multipliers | 432 | — |
| General-purpose PLLs | 4 | 4 |
| Process Node | 60 nm | — |
| Core Voltage | 1.2 V | — |
| Packhaging | 484-ball FineLine BGA (F23) | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| Ball Pitch | 1.0 mm | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Temperature na Operasyon | 0C to +85C (Commercial) | 0C to 85C (Commercial) |
| Speed Grade | C8 | C8 (commercial, 8 ns internal timing) |
| Tindminan RoHS | Compliant | Compliant |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| Embedded Multipliers (18x18) | — | 343 |
| Maximum User I/O Pins | — | 343 |
| Process Technology | — | 60 nm low-leakage CMOS |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Configuration Modes | — | AS / PS / JTAG / FPP |
| Level ng MSL | — | MSL3 (per JEDEC J-STD-020) |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |