EP4CE115F23I7N vs EP4CE15U14A7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE115F23I7N sa pamamagitan ng Intel at EP4CE15U14A7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE115F23I7N | EP4CE15U14A7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Family | EP4CE115 (F23 package) | Cyclone IV E |
| Logic Elements (LE) | 114,480 | 15,408 |
| Embedded Memory Bits | 3,981,312 bits | — |
| Maximum User I/Os | 280 | 165 |
| Logic Array Blocks (LABs) | 7,180 | — |
| Number of PLLs | 4 | — |
| 18x18 Hardware Multipliers | 266 | — |
| Core Voltage | 1.0 V / 1.2 V | 1.2 V |
| I/O Voltage Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | [DATA_NEEDED: operating temperature range] |
| Packhaging | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch | 256-ball UBGA (Ultra-FineLine BGA) |
| Uri ng Pagpapasok | Surface Mount | — |
| Process Technology | 60 nm low-power CMOS (TSMC) | — |
| Configuration Method | JTAG, Active Serial, Active Parallel | — |
| Level ng MSL | 3 | — |
| Tindminan RoHS | Compliant | Compliant (per distributor listings) |
| Lead-Free | Yes | — |
| Total Memory Bits | — | 516,096 bits |
| Embedded 18x18 Multipliers | — | 56 |
| General-Purpose PLLs | — | 4 |
| Speed Grade | — | 7 |
| Process Node | — | 60 nm low-power |
| Configuration Modes | — | JTAG, AS, AP, PS |
| Bitstream Encryption | — | AES-128 (security-enhanced variant) |
| External Memory Support | — | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II |